Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Emmanuel Nolot"'
Autor:
Marvin Frauenrath, Lara Casiez, Omar Concepción Díaz, Nicolas Coudurier, Nicolas Gauthier, Sidi-Mohammed N'hari, Emmanuel Nolot, Philippe Rodriguez, Dan Buca, Nicolas Pauc, Vincent Reboud, Jean-Michel Hartmann
Publikováno v:
ECS Transactions. 109:3-19
Dopant concentrations higher than 1x1019 cm-3 are required to improve the performances of various GeSn based devices such as photodetectors, electrically pumped lasers and so on. In this study, the in-situ Boron and Phosphorous doping of SiGeSn was i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4816f55d1e96fe94bf9e4da750f1f987
https://doi.org/10.1149/10904.0003ecst
https://doi.org/10.1149/10904.0003ecst
Autor:
Bhobnibhit Chatmaneerungcharoen, Mathias Fraccaroli, François Martin, Cyril Guedj, Emmanuel Nolot, Denis Rouchon, Nicolas Vaxelaire, Roselyne Templier, Adeline Grenier, Anne-Marie Papon, Hervé Roussel, Laetitia Rapenne, Hubert Renevier, Stéphane Cadot
Publikováno v:
Chemistry of Materials. 34:5842-5851
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0ee7b38925a12f35c395727231e60e3
https://doi.org/10.1021/acs.chemmater.2c00567
https://doi.org/10.1021/acs.chemmater.2c00567
Publikováno v:
ECS Transactions. 98:325-338
The holy grail of group-IV light emission would be electrically pumped lasing at Room Temperature (RT). In CEA-LETI, the performance of p-i-n light emitting diodes is limited by the use of in-situ doped Ge layers beneath and above the active layer st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4def7c4c19a2f8efa572d8184c970d2
https://doi.org/10.1149/09805.0325ecst
https://doi.org/10.1149/09805.0325ecst
Autor:
C. Sabbione, Jean-Paul Barnes, Emmanuel Nolot, Gabriele Navarro, Agnès Tempez, Sebastien Legendre, Yann Mazel
Publikováno v:
Surface and Interface Analysis. 52:895-899
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3779d3953d05f81a29f15ab96d3725e
https://doi.org/10.1002/sia.6823
https://doi.org/10.1002/sia.6823
Autor:
A. Roule, W. Pessoa, C. Sabbione, Catia Costa, Chris Jeynes, Emmanuel Nolot, Gabriele Navarro, M. Mantler, F. Pierre
Publikováno v:
Journal of Analytical Atomic Spectrometry. 35:701-712
We have calibrated on-site WD-XRF (wavelength-dispersive X-ray fluorescence) measurements of GeSbTe:N (GST:N) stoichiometry with off-site accurate ion beam analysis (IBA). N is determined by elastic backscattering spectrometry (EBS) using the resonan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8906f09c42d512d55fd5eec1d87125ba
https://doi.org/10.1039/c9ja00382g
https://doi.org/10.1039/c9ja00382g
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a2c32ba567859e223eb7d932edfbba4
https://doi.org/10.2139/ssrn.4056716
https://doi.org/10.2139/ssrn.4056716
Autor:
Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, Julien Garrione, Lucie Prazakova, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, Simon Martin, Chiara Sabbione, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, Abdelkader Souifi, Francois Andrieu, Gabriele Navarro
Publikováno v:
IEEE Transactions on Electron Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3db138f27cecd4f37e3ce99ddea1996
Autor:
A. Jannaud, Marianne Coig, J. Garrione, Mathieu Bernard, Marie-Claire Cyrille, F. Al Mamun, F. Mazen, B. Hemard, T. Magis, C. Socquet-Clerc, Gabriele Navarro, V. Meli, Guillaume Bourgeois, Emmanuel Nolot, Francois Andrieu, N. Bernier, J. P. Barnes, Eugénie Martinez, N. Castellani, C. Charpin, F. Milesi, C. Sabbione, F. Laulagnet
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
International audience; In this paper we investigate the effect of Carbon ion implantation in Ge$_2$ Sb$_2$ Te$_5$ based Phase-Change Memory (PCM) targeting reliability improvement in 4kb memory arrays. We show how ion implantation by beam line allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e57736ecd498b80119d3cb144b5aed
https://hal-cea.archives-ouvertes.fr/cea-03373794
https://hal-cea.archives-ouvertes.fr/cea-03373794
Autor:
Marvin Frauenrath, Lara Casiez, Omar Concepción Díaz, Nicolas Coudurier, Nicolas Gauthier, Sidi-Mohammed N'hari, Emmanuel Nolot, Philippe Rodriguez, Dan Buca, Nicolas Pauc, Vincent Reboud, Jean-Michel Hartmann
Publikováno v:
ECS Meeting Abstracts. :1165-1165
A CMOS compatible, direct bandgap material for optical interconnects can be obtained by alloying Ge with Sn 1, applying tensile stress to Ge 2 or both 3. Lasing in GeSn was demonstrated in 2015 4 by Wirths et al., followed in 2020 by electrically pum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190463567b6c6b6b62d4f19204ab2f90
https://doi.org/10.1149/ma2022-02321165mtgabs
https://doi.org/10.1149/ma2022-02321165mtgabs
Autor:
Pierre Ferret, Yann Mazel, Guy Feuillet, Mrad Mrad, Joël Kanyandekwe, Matthew Charles, Emmanuel Nolot, Marc Veillerot
Publikováno v:
Journal of Crystal Growth. 507:139-142
We have shown that in an AIXTRON Close Coupled Showerhead MOVPE system, InAlN layers are strongly contaminated with gallium, giving increasing contamination when thicker GaN layers are grown below the InAlN. We have also shown that as the gallium con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7782f0a15633f8edb4ef39e349789bb2
https://doi.org/10.1016/j.jcrysgro.2018.10.039
https://doi.org/10.1016/j.jcrysgro.2018.10.039