Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Emmanuel Igumbor"'
Publikováno v:
Nanoenergy Advances, Vol 4, Iss 1, Pp 122-132 (2024)
The possibility of using graphane monolayer crystals as an electrode material is becoming popular. Graphane is stable at room temperature and has a large surface area, but its chemical inertness hinders its direct interactions with Li ions. In this s
Externí odkaz:
https://doaj.org/article/175c8bcd5c1b461dbc170b650c0ff4b8
Publikováno v:
Physica B: Condensed Matter. 573:67-71
We have performed the ab initio hybrid density functional theory (DFT) calculations to investigate the electronic structure of various neutral and charged vacancies (VH, VCH, VC, VC−CH and VC−C) in a diamond-like bilayer graphane. In the neutral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5fe691f6ad9788250ffc30653d04d43
https://doi.org/10.1016/j.physb.2019.08.025
https://doi.org/10.1016/j.physb.2019.08.025
Publikováno v:
Journal of Materials Science. 54:10798-10808
In this report, we used the hybrid density functional theory to systematically investigate the formation of substitution–interstitial complex defects formed by group III (B, Al, Ga and In) atoms in Ge for charge states − 2, − 1, 0, + 1 and + 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d023f40fac9c2c920a2bf58d69764ba9
https://doi.org/10.1007/s10853-019-03627-0
https://doi.org/10.1007/s10853-019-03627-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 442:41-46
Studies of substitutional impurities in 4H-SiC play a major role in identifying the most enhanced defect levels induced. N and B substitution in 4H-SiC on separate studies reveal that the N Si induced negative-U charge state ordering while the B Si i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d4bf6b76ccad2b99c739fa8a09c2c0b
https://doi.org/10.1016/j.nimb.2019.01.014
https://doi.org/10.1016/j.nimb.2019.01.014
Autor:
Okikiola Olaniyan, Refilwe Edwin Mapasha, Emmanuel Igumbor, Ezekiel Omotoso, Walter E. Meyer, Helga T. Danga
Publikováno v:
Materials Science in Semiconductor Processing. 89:77-84
The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9356145ce07e64ae7e6fd531911c22
https://doi.org/10.1016/j.mssp.2018.09.001
https://doi.org/10.1016/j.mssp.2018.09.001
Autor:
M.J. Legodi, Alexander Tapera Paradzah, Ezekiel Omotoso, Emmanuel Igumbor, P.J. Janse van Rensburg, Mmantsae Diale, Walter E. Meyer, F.D. Auret, Helga T. Danga
Publikováno v:
Surface and Coatings Technology. 355:2-6
We have characterised the deep level defects present before and after annealing the proton-irradiated Ni/nitrogen-doped 4H-SiC Schottky barrier diodes (SBDs) using deep level transient spectroscopy. The bombardment of the sample was carried out at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1cf6c576e2dd6edc56bd213e40086b2
https://doi.org/10.1016/j.surfcoat.2018.04.028
https://doi.org/10.1016/j.surfcoat.2018.04.028
Autor:
Abubakar A. Khaleed, R.E. Maphasha, Okikiola Olaniyan, Emmanuel Igumbor, Ncholu I. Manyala, Moshawe J. Madito
Publikováno v:
Carbon. 129:207-227
Ab-initio calculations within the framework of density functional theory (DFT) have been performed to study the stability, electronic and optical properties of Be and N singly doped and co-doped graphene. The effect of the dopants concentration and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0accbbfe63cc7ee5c983f06edaecb10b
https://doi.org/10.1016/j.carbon.2017.12.014
https://doi.org/10.1016/j.carbon.2017.12.014
Publikováno v:
Physica B: Condensed Matter. 535:167-170
Results based on density functional theory modelling of electronic and structural properties of single layer WTe2 dichalcogenides doped with X (X=H, Li and Be) were presented. The generalized gradient approximation functional of Perdew, Burke, and Er
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88067cef4195e307c64b350b4bd0b870
https://doi.org/10.1016/j.physb.2017.07.024
https://doi.org/10.1016/j.physb.2017.07.024
Autor:
Walter E. Meyer, Helga T. Danga, Shandirai Malven Tunhuma, Emmanuel Igumbor, Ezekiel Omotoso, F.D. Auret
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 442:28-30
Primary defects introduced in boron-doped silicon by an alpha-particle source with a fluence rate of 7 × 106 cm−2 s−1 at cryogenic temperatures were investigated using deep-level transient spectroscopy (DLTS). The data showed that the defects ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52c46b2559e267d173720373d7716f4
https://doi.org/10.1016/j.nimb.2019.01.015
https://doi.org/10.1016/j.nimb.2019.01.015
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 409:9-13
We present results of the structural, energetic and electronic properties of rare earth (RE) interstitial-complexes in Ge ( RE Ge Ge i ; for RE: Ce, Pr, Eu, Er and Tm). We used the Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional within the fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f83acee65cbbc8efb9b1de028bdf3f
https://doi.org/10.1016/j.nimb.2017.04.044
https://doi.org/10.1016/j.nimb.2017.04.044