Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Emmanuel Collard"'
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In lateral power diodes, the conductivity modulation mechanism can pave the way to the demonstration of surge current capability. In a Hybrid Anode Diode concept with a p-GaN layer, an anode contact on p-GaN layer can be a source of hole injection th
Autor:
Wahid Khalfaoui, Frédéric Cayrel, Emmanuel Collard, Maher Nafouti, Daniel Alquier, Georgio El-zammar, Arnaud Yvon
Publikováno v:
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
In this work, non-recessed and Au-free low resistance Ohmic contacts are investigated on AlGaN/GaN on silicon. Based on Ti/Al bilayers, Circular TLM are fabricated and contact values are extracted varying different parameters such as single and combi
Autor:
Arnaud Yvon, Nicolas Thierry-Jebali, Amira Souguir-Aouani, Emmanuel Collard, Dominique Planson, Dominique Tournier
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.1190-1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.1190-1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩
This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate th
Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
Autor:
Emmanuel Collard, M. Lamhamdi, Arnaud Yvon, Daniel Alquier, Eric Frayssinet, Yvon Cordier, Anne Elisabeth Bazin, Frédéric Cayrel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 372:67-71
Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging tas
Publikováno v:
physica status solidi (a). 213:2364-2370
Efficient edge terminations are fundamental for power electronic devices. High resistive edge termination technique obtained by ion implantation is a possible solution for GaN Schottky barrier diodes (SBD), but may induce defects detrimental to the d
Autor:
Frédéric Cayrel, Emmanuel Collard, Daniel Alquier, Jérôme Biscarrat, Xi Song, Jean-François Michaud
Publikováno v:
Materials Science Forum. :581-584
For this study, 4H SiC samples were implanted with aluminum at room temperature, 200°C and 600°C with different energies, ranging from 30 to 380 keV, for a total dose of 4x1015 cm 2, to create a “box-like” profile. To activate dopants, samples
Publikováno v:
Materials Science Forum. :825-828
Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters
Autor:
Emmanuel Collard, Veronique Soulière, Gabriel Ferro, François Cauwet, Stéphane Berckmans, Laurent Auvray, Christian Brylinski
Publikováno v:
Journal of Crystal Growth. 354:119-128
The crystal growth of 3C-SiC onto silicon substrate by Vapor–Liquid–Solid (VLS) transport, where a SiGe liquid phase is fed with propane, has been investigated. Three sample configurations were used. In a preliminary approach, the VLS growth of S
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 275, pp.37-40. 〈10.1016/j.nimb.2011.12.003〉
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 275, pp.37-40. ⟨10.1016/j.nimb.2011.12.003⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 275, pp.37-40. 〈10.1016/j.nimb.2011.12.003〉
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 275, pp.37-40. ⟨10.1016/j.nimb.2011.12.003⟩
International audience; To face silicon limits, gallium nitride (GaN) exhibits major interests for optoelectronics and power electronic devices. Nevertheless, several challenges have to be overcome, with local doping by ion implantation as a major on
Autor:
Xi Song, Jérôme Biscarrat, Thierry Chassagne, Emmanuel Collard, Marc Portail, Jean-François Michaud, Marcin Zielinski, Daniel Alquier, Frédéric Cayrel
Publikováno v:
Materials Science Forum. 711:179-183
We report on the influence of titanium thickness on the structural and electrical properties of annealed Ti/Ni ohmic contacts on highly doped n-type 3C-SiC. Electrical analysis by means of circular transfer length method demonstrate that an interlaye