Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Emmanuel, Julien"'
Diagnosis of Menke‐Hennekam syndrome by prenatal whole exome sequencing and review of prenatal signs
Autor:
Guillaume Cogan, Nicolas Bourgon, Roxana Borghese, Emmanuel Julien, Aurélia Jaquette, Bertrand Stos, Amale Achaiaa, Sophie Chuon, Patrick Nitschke, Cécile Fourrage, Julien Stirnemann, Lucile Boutaud, Tania Attie‐Bitach
Publikováno v:
Molecular Genetics & Genomic Medicine, Vol 11, Iss 9, Pp n/a-n/a (2023)
Abstract Introduction CREBBP truncating mutations and deletions are responsible for the well‐known Rubinstein‐Taybi syndrome. Recently, a new, distinct CREBBP‐linked syndrome has been described: missense mutations located at the 3′ end of exo
Externí odkaz:
https://doaj.org/article/79a4b3e89846448e9a3d95301ed8bda3
Autor:
Mathilde Weber, Dana Jaber, Ferechte Encha‐Razavi, Emmanuel Julien, Julie Grevoul‐Fesquet, Julie Steffann, Judith Melki, Jelena Martinovic
Publikováno v:
American journal of medical genetics. Part AREFERENCES. 188(8)
The recent finding that some patients with fetal akinesia deformation sequence (FADS) carry variants in the TUBB2B gene has prompted us to add to the existing literature a first description of two fetal FADS cases carrying TUBA1A variants. Hitherto,
Publikováno v:
HPCS 2020-International Conference on High Performance Computing & Simulation
HPCS 2020-International Conference on High Performance Computing & Simulation, Dec 2020, Barcelona, Spain. pp.1-8
HPCS 2020-International Conference on High Performance Computing & Simulation, Dec 2020, Barcelona, Spain. pp.1-8
International audience; We present a new network simulator, which models the Portals 4 communication protocol used in High Performance Computing (HPC). It is built on top of SimGrid and uses cooperative actors to model the interactions between comput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5ee8d41da788bd2c55cd7805d2cdce6e
https://hal.archives-ouvertes.fr/hal-02972297/document
https://hal.archives-ouvertes.fr/hal-02972297/document
Autor:
Julien Tranchant, Benoit Corraze, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Laurent Cario, Jaafar Ghanbaja, Jury Sandrini, Etienne Janod, Giovanni De Micheli, Marie-Paule Besland
Publikováno v:
ECS Transactions. 75:3-12
The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwiched between TiN electrodes. The device
Autor:
Jury Sandrini, Maxime Thammasack, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Xifan Tang, Somayyeh Rahimian Omam, Giovanni De Micheli
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015.
Field Programmable Gate Arrays (FPGAs) rely heavily on complex routing architectures. The routing structures use programmable switches and account for a significant share in the total area, delay and power consumption numbers. With the ability of bei
Publikováno v:
Disruptive Logic Architectures and Technologies
This book discusses the opportunities offered by disruptive technologies to overcome the economical and physical limits currently faced by the electronics industry. It provides a new methodology for the fast evaluation of an emerging technology from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d000aa6deeb685183aa945dc876c53c7
https://doi.org/10.1007/978-1-4614-3058-2
https://doi.org/10.1007/978-1-4614-3058-2
Publikováno v:
New Philosophy: Henri Bergson; 3/1/2006, p1, 77p
Autor:
Jean-Philippe Noel, Jean-Michel Portal, Ian O'Connor, Alexandre Levisse, Pierre-Emmanuel Julien Marc Gaillardon, Bastien Giraud, Mathieu Moreau
Publikováno v:
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
IEEE Transactions on Nanotechnology, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
IEEE Transactions on Nanotechnology, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩
With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access mem
A method for transforming a tautology check of an original logic circuit into a contradiction check of the original logic circuit and vice versa comprises interpreting the original logic circuit in terms of AND, OR, MAJ, MIN, XOR, XNOR, INV original
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______185::b21d5db6e47117f979569ae349669596
https://infoscience.epfl.ch/record/228076
https://infoscience.epfl.ch/record/228076