Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Emma Rocco"'
Autor:
Alireza Lanjani, Benjamin McEwen, Vincent Meyers, David Hill, Winston K. Chan, Emma Rocco, Shadi Omranpour, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-6 (2024)
Quantum well infrared photodetectors (QWIPs) have been demonstrated to be a suitable candidate for IR detection applications. These detectors attracted increasing interest due to their design flexibility and broad spectral absorption from short wave
Externí odkaz:
https://doaj.org/article/0557f4513c90445f82b371906fa85d8b
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
Autor:
Emma Rocco, Jonathan Marini, Kasey Hogan, Vincent Meyers, Benjamin McEwen, L. Douglas Bell, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 2, Pp 1-12 (2022)
We review the recent progress to achieve air stable III-nitride photocathodes for applications as photon detectors. High conductivity p-type films are critically important to realize high quantum efficiency (QE) photocathodes with effective negative
Externí odkaz:
https://doaj.org/article/5a7bc1fce6c440d5abeefd7ae3b7852f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 581-588 (2019)
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode. In this configuration, p-GaN body-diode-based back-gate c
Externí odkaz:
https://doaj.org/article/d9b2a485f82144329c8cea92cf47059b
Autor:
Kasey Hogan, Miguel Rodriguez, Emma Rocco, Vincent Meyers, Benjamin McEwen, F. Shadi Shahedipour-Sandvik
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085110-085110-6 (2020)
Here, we report on the application of an electron source with high accelerating voltage (62 kV–200 kV) to simulate betavoltaic power generation capabilities of a planar GaN PIN (p-GaN/i-GaN/n-GaN) device. The in situ electrical characterization rep
Externí odkaz:
https://doaj.org/article/3abb963fd532480d8e24ded1aa384394
Autor:
Benjamin McEwen, Michael A. Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, Fatemeh Shahedipour-Sandvik
Publikováno v:
ACS Applied Electronic Materials. 4:3780-3785
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower
Autor:
Ronald Green, B. McEwen, Kasey Hogan, Aivars J. Lelis, Vincent Meyers, V. Kaushik, F. Nouketcha, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, T. Murray, Emma Rocco
Publikováno v:
Journal of Electronic Materials. 50:80-84
In this work, the effects of post-deposition annealing in forming gas ambient on the structure of the Al2O3/GaN interface are investigated. Using capacitance–voltage (C–V) and conductance–frequency (G–f) measurements, the quality of Al2O3/GaN
Publikováno v:
IEEE Transactions on Electron Devices. 67:3983-3987
Integration of body-diode-based back-gate control in AlGaN/GaN high-electron mobility transistors (HEMTs) was recently demonstrated by the authors to enable dynamic control of the device characteristics. Here, we present an experimental study of drai
Autor:
Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Emma Rocco, Kasey Hogan, Vincent Meyers, B. McEwen, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, Sean Tozier
Publikováno v:
Journal of Electronic Materials. 49:3481-3489
A non-thermal method for removal of surface damage created by dry etching has previously been documented or n-GaN, but no such effort has been reported for p-GaN. In this study, Ga-polar p-GaN films were subjected to inductively coupled plasma reacti
Autor:
Michael Alexander Reshchikov, Mykhailo Vorobiov, Oleksandr Andrieiev, Benjamin McEwen, Emma Rocco, Vincent Meyers, Denis O. Demchenko, F. Shadi Shahedipour-Sandvik
Publikováno v:
physica status solidi (b). :2200487