Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Emirhan Urfali"'
Autor:
Doğan Yılmaz, Oğuz Odabaşı, Gurur Salkım, Emirhan Urfali, Büşra Çankaya Akoğlu, Ekmel Özbay, Şemsettin Altındal
Publikováno v:
Semiconductor Science and Technology
In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the normally-off performance of the FinFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a9ab88f94e1cb1b30d3bd6ddc9ef0d
https://avesis.gazi.edu.tr/publication/details/2a6dcf98-32a2-4b10-a5e1-f9451ca7f007/oai
https://avesis.gazi.edu.tr/publication/details/2a6dcf98-32a2-4b10-a5e1-f9451ca7f007/oai
Autor:
Gizem Tendurus Caglar, Yunus Erdem Aras, Emirhan Urfali, Dogan Yilmaz, Ekmel Ozbay, Sedat Nazlibilek
Publikováno v:
Microwave Mediterranean Symposium (MMS)
Conference Name: 2022 Microwave Mediterranean Symposium (MMS) Date of Conference: 09-13 May 2022 Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e68fa5b646de83a1046a78bfd2142f4
https://hdl.handle.net/11693/111221
https://hdl.handle.net/11693/111221