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InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the increment of AsH3 flow increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3104::3aeade53d3140d4fbbbdd386a8a428bc
https://hdl.handle.net/20.500.12418/13841
https://hdl.handle.net/20.500.12418/13841
Autor:
Emine Kaynar, Hicret Hopoğlu, İsmail Altuntaş, İlkay Demir, Muhammed Sayraç, Ebru Ş. Tüzemen, B. Özgür Alaydin
Publikováno v:
Optica Advanced Photonics Congress 2022.
In this study, we aim to eliminate low thermal conductivity and refractive index differences in InP and GaSb based materials, which result in low output power and limited operation wavelength range for VECSELs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b0cc28151b9344908cc2078b93372d2
https://doi.org/10.1364/noma.2022.noth3c.4
https://doi.org/10.1364/noma.2022.noth3c.4
InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the increment of AsH3 flow increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0150e70fdf63eba71d1b0f333e61d43f
https://hdl.handle.net/20.500.12418/13397
https://hdl.handle.net/20.500.12418/13397