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pro vyhledávání: '"Emine Bakali"'
Bakali, Emine/0000-0002-5486-5769
WOS: 000437146400080
CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the densit
WOS: 000437146400080
CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66c220bedd96ba773582a9a370a09b8f
https://hdl.handle.net/11147/9201
https://hdl.handle.net/11147/9201
CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e450deacf05ac0d5e46566db3fda286
http://hdl.handle.net/11147/5888
http://hdl.handle.net/11147/5888