Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Emily V.S. Hofmann"'
Autor:
Mattia Mulazzi, Leo Miglio, Felix Reichmann, Emilio Scalise, Francesco Montalenti, Giovanni Capellini, Andreas Becker, Wolfgang M. Klesse, Emily V.S. Hofmann, J. Dabrowski
Publikováno v:
Applied Surface Science. 571:151264
While the Ge(0 0 1) surface has been extensively studied, it is still debated whether it is of conducting or semiconducting nature at room temperature. The evidence collected by angle-resolved photoelectron spectroscopy experiments in the past has le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dace79c528aaa8fea7ae12bd512b5022
https://doi.org/10.1016/j.apsusc.2021.151264
https://doi.org/10.1016/j.apsusc.2021.151264
Autor:
Katharina Noatschk, Thomas Schroeder, Götz Seibold, Emily V.S. Hofmann, J. Dabrowski, Neil J. Curson, Wolfgang M. Klesse
Publikováno v:
Surface Science. 713:121912
Defects play an important role for surface reconstructions and therefore also influence the substrate growth. In this work we present a first principle calculation for the Ge(001) surface without and with tin impurities incorporated into the top surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c8b3872c5886a894a089e083e380c2
https://doi.org/10.1016/j.susc.2021.121912
https://doi.org/10.1016/j.susc.2021.121912
Autor:
Taylor J. Z. Stock, Wolfgang M. Klesse, Francesco Montalenti, Neil J. Curson, Emilio Scalise, Steven R. Schofield, Emily V.S. Hofmann, Leo Miglio, Giovanni Capellini
Publikováno v:
Applied Surface Science. 561:149961
The growth of multi-layer germanium-tin (GeSn) quantum wells offers an intriguing pathway towards the integration of lasers in a CMOS platform. An important step in growing high quality quantum well interfaces is the formation of an initial wetting l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83074cfdc10a59aa738004aa7aea2fb9
https://doi.org/10.1016/j.apsusc.2021.149961
https://doi.org/10.1016/j.apsusc.2021.149961