Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Emilio Nogales"'
Autor:
Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/aaba7421c0f44777b0e57d0f2915655a
Autor:
Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β - $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 could strongly influence and contribute to the d
Externí odkaz:
https://doaj.org/article/1f53832feefd4d8ea3955911ea2cf7c3
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1445 (2023)
The temperature-dependent luminescence properties of γ-Ga2O3 nanoparticles prepared by a precipitation method are investigated under steady-state and pulsed-light excitation. The main photoluminescence (PL) emission at room temperature consists of a
Externí odkaz:
https://doaj.org/article/a4cdb7e6c33442b6abae9a317163ba13
Autor:
Daniel Carrasco, Eva Nieto-Pinero, Manuel Alonso-Orts, Rosalía Serna, Jose M. San Juan, María L. Nó, Jani Jesenovec, John S. McCloy, Emilio Nogales, Bianchi Méndez
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 1126 (2023)
An accurate knowledge of the optical properties of β-Ga2O3 is key to developing the full potential of this oxide for photonics applications. In particular, the dependence of these properties on temperature is still being studied. Optical micro- and
Externí odkaz:
https://doaj.org/article/904876944694452c8f8bb3a94241b85c
Publikováno v:
AIMS Materials Science, Vol 3, Iss 2, Pp 425-433 (2016)
A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga2O3, GeO2 or Sb2O3, among others, and some ternary oxide compounds (ZnGa2O4, Zn2GeO4). In o
Externí odkaz:
https://doaj.org/article/99ffb617c30f4b7f8cc097243ab7819d
Autor:
Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Publikováno v:
Scientific Reports. 12
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β -$${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 could strongly influence and contribute to the development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58fb1b7f00ed0f9606cf0190e48c1447
https://doi.org/10.1038/s41598-022-18121-y
https://doi.org/10.1038/s41598-022-18121-y
Autor:
Manuel Alonso-Orts, Daniel Carrasco, Jose San Juan, M. Luisa No, Alicia de Andrés, Emilio Nogales, Bianchi Méndez Martín
Publikováno v:
E-Prints Complutense. Archivo Institucional de la UCM
Universitad de Lleida
Universitad de Lleida
In this work, we present our recent results on the applicability of optical microcavities based on Cr doped Ga_2O_3 wires to operate as a nanothermometer in a wide temperature range (at least from 150 up to 550 K) and achieving a temperature precisio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afc336946cd462db55fe078082a23142
https://eprints.ucm.es/id/eprint/74571/
https://eprints.ucm.es/id/eprint/74571/
Publikováno v:
Journal of Materials Science. 55:11431-11438
Effective doping of semiconductor oxide nanostructures is needed to control n-type conductivity; however, out-diffusion of impurities in high quality crystals is still a bottleneck in nanotechnology. Here, germanium-doped gallium oxide (β-Ga2O3) nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce041ddf1c5d238dd8672f0580ba2d9f
https://doi.org/10.1007/s10853-020-04859-1
https://doi.org/10.1007/s10853-020-04859-1
Autor:
Marcelo B, Barbosa, João Guilherme, Correia, Katharina, Lorenz, Armandina M L, Lopes, Gonçalo N P, Oliveira, Abel S, Fenta, Juliana, Schell, Ricardo, Teixeira, Emilio, Nogales, Bianchi, Méndez, Alessandro, Stroppa, João Pedro, Araújo
Publikováno v:
Scientific reports. 12(1)
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor [Formula: see text]-[Formula: see text] could strongly influence and contribute to the development of the next genera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e094631bba29b75d0a5af4537099725c
https://pubmed.ncbi.nlm.nih.gov/36028742
https://pubmed.ncbi.nlm.nih.gov/36028742
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8e391743521d25abb7a7006218c84c1
https://doi.org/10.2139/ssrn.4061593
https://doi.org/10.2139/ssrn.4061593