Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Emilio A. Sovero"'
Autor:
Emmanuel J. Candès, Emilio A. Sovero, D. Ching, Azita Emami-Neyestanak, Michael C. Grant, Juhwan Yoo, Justin Romberg, Stephen Becker, E. B. Nakamura, Michael B. Wakin
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 2:516-529
We present a wide bandwidth, compressed sensing based nonuniform sampling (NUS) system with a custom sample-and-hold chip designed to take advantage of a low average sampling rate. By sampling signals nonuniformly, the average sample rate can be more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3805dc7801bbc296591cd9a03835b6
https://doi.org/10.1109/jetcas.2012.2214635
https://doi.org/10.1109/jetcas.2012.2214635
Autor:
Emilio A. Sovero, Azita Emami-Neyestanak, Juhwan Yoo, Stephen Becker, Emmanuel J. Candès, Michael C. Grant, Justin Romberg, C. K. Le, Michael B. Wakin, C. Turnes, E. B. Nakamura
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 2:626-638
In this paper we present a complete (hardware/ software) sub-Nyquist rate (× 13) wideband signal acquisition chain capable of acquiring radar pulse parameters in an instantaneous bandwidth spanning 100 MHz-2.5 GHz with the equivalent of 8 effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ccd1e3a0499806488300a75bd0504fb
https://doi.org/10.1109/jetcas.2012.2214634
https://doi.org/10.1109/jetcas.2012.2214634
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:1497-1503
A 16:1 STS-768 multiplexer IC has been designed and fabricated using the Vitesse Semiconductor VIP-1 process. This IC is part of a complete chip-set solution for a 40-Gb/s STS-768 optical communication transceiver module. The multiplexer IC features
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7edfe202823d8a4bab291cee16e65d06
https://doi.org/10.1109/jssc.2003.815919
https://doi.org/10.1109/jssc.2003.815919
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:1518-1523
High gain and bandwidth transimpedance amplifiers (TIA) are required for fiber optic receiver modules. This paper reports on the design, fabrication and characterization of a 40 Gbit/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP/In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e856677a98dd2799752a5bde2693791f
https://doi.org/10.1109/jssc.2003.815927
https://doi.org/10.1109/jssc.2003.815927
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:891-897
Ka- and Q-band watt-level monolithic power amplifiers (PAs) operating at a low drain bias of 3.6 V are presented in this paper. Design considerations for low-voltage operation have been carefully studied, with an emphasis on the effect of device mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6196c89c20cb57266446033bf8dc4a12
https://doi.org/10.1109/22.846714
https://doi.org/10.1109/22.846714
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:2700-2708
Both 1.6- and 3.3-W power-amplifier (PA) modules were developed at 24 GHz using a waveguide-based power combiner. The combiner is based on a double antipodal finline-to-microstrip transition structure, which also serves as a two-way power combiner. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d85d2ae94e1034f712d24cef2ef6067
https://doi.org/10.1109/22.899033
https://doi.org/10.1109/22.899033
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:1237-1241
A 44-GHz monolithic waveguide plane-wave amplifier (PWA) with improved unit cell design is presented in this paper. The unit cell is a two-stage direct-coupled design and satisfies size, bistability, and stability requirements of the waveguide PWA. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b778578a7ebba5972d9bf274a2dc960
https://doi.org/10.1109/22.709463
https://doi.org/10.1109/22.709463
Publikováno v:
International Journal of Infrared and Millimeter Waves. 16:1901-1909
A 36-element monolithic grid amplifier has been fabricated. The peak gain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active elements are pairs of heterojunction-bipolar-transistor's (HBT's). The individual transistors in the grid have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::038bc6f728eba7871f872306aa31759f
https://doi.org/10.1007/bf02072546
https://doi.org/10.1007/bf02072546
Autor:
Emilio A. Sovero, M. Kim, James J. Rosenberg, M.P. De Lisio, David B. Rutledge, Jonathan Hacker, Jung-Chih Chiao, D.R. Gagnon, Shi-Jie Li
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:1762-1771
A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential pairs. The metal grid pattern was empirically designed to provide effective coupling between th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50ca9f9fba5e5a3ddd6430b6fe533a00
https://doi.org/10.1109/22.247921
https://doi.org/10.1109/22.247921
Autor:
Jonathan Hacker, J. Studer, Emilio A. Sovero, Robert E. Mihailovich, J.A. Higgins, J.F. DeNatale, Moonil Kim
Publikováno v:
IEEE Microwave and Wireless Components Letters. 11:53-55
We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is a metal contact relay with electrical isolation between signal and drive lines.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a60d6996b7085743e1de857001c7c8f
https://doi.org/10.1109/7260.914300
https://doi.org/10.1109/7260.914300