Výsledky vyhledávání - "Emilie Despiau-Pujo"

H + ion-induced damage and etching of multilayer graphene in H 2 plasmas

Autor: A. Davydova, David B. Graves, Emilie Despiau-Pujo, Gilles Cunge

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2017, 121 (13), ⟨10.1063/1.4979023⟩
Journal of Applied Physics, 2017, 121 (13), ⟨10.1063/1.4979023⟩

H+ ion-induced damage of multilayer graphene (MLG) is investigated using Molecular Dynamics simulations as H2 plasmas could provide a possible route to pattern graphene. Low-energy (5–25 eV) H+ cumulative bombardment of ABA-stacked MLG samples show

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e290a39353ca004b6bad543630bf8658
https://hal.univ-grenoble-alpes.fr/hal-01891243

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(Invited) Towards Selective Etching with Nanometric Control Using Remote Plasma Source

Autor: Erwine Pargon, Vincent Renaud, Camille Petit-Etienne, Florian Pinzan, Emilie Despiau-Pujo, Gilles Cunge, Olivier Joubert

Publikováno v: ECS Meeting Abstracts. :901-901

The transition from planar Metal-Oxide-Semiconductor (MOS) transistor architecture to 3 Dimension (3D) Field Electron Transistor (FET) architecture has been necessary to pursue transistor scaling and overcome high power consumption of logic chip. Tod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cbdedf7ef0581ac186d6034317a6800b
https://doi.org/10.1149/ma2019-02/14/901

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Roughness generation during Si etching in Cl 2 pulsed plasma

Autor: Gilles Cunge, Odile Mourey, Maxime Darnon, Michel Pons, Camille Petit-Etienne, Emilie Despiau-Pujo, Olivier Joubert, P. Brichon, Eddy Lattu-Romain

Publikováno v: Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2016, 34 (4), ⟨10.1116/1.4951694⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (4), ⟨10.1116/1.4951694⟩

Pulsed plasmas are promising candidates to go beyond limitations of continuous waves' plasma. However, their interaction with surfaces remains poorly understood. The authors investigated the silicon etching mechanism in inductively coupled plasma (IC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15d1d6349bcdf11569a8a1852c9775c4
https://hal.univ-grenoble-alpes.fr/hal-01881982

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Cleaning graphene: A first quantum/classical molecular dynamics approach

Autor: Laurence Magaud, Emilie Despiau-Pujo, A. Davydova, David B. Graves, L. Delfour, Gilles Cunge

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2016, 119 (12), pp.125309. ⟨10.1063/1.4945034⟩
Journal of Applied Physics, 2016, 119 (12), pp.125309. ⟨10.1063/1.4945034⟩

Graphene outstanding properties created a huge interest in the condensed matter community and unprecedented fundings at the international scale in the hope of application developments. Recently, there have been several reports of incomplete removal o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::299c6b56582692d26470f52f7e1f725b
https://hal.univ-grenoble-alpes.fr/hal-01881977

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Measuring ion velocity distribution functions through high-aspect ratio holes in inductively coupled plasmas

Autor: Camille Petit-Etienne, Odile Mourey, Jerome Dubois, Laurent Vallier, Emilie Despiau-Pujo, Gilles Cunge, Nader Sadeghi, Maxime Darnon, Philippe Bézard

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2016, 108, pp.93109-32108. ⟨10.1063/1.4942892⟩
Applied Physics Letters, 2016, 108, pp.93109-32108. ⟨10.1063/1.4942892⟩

Several issues associated with plasma etching of high aspect ratio structures originate from the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are primarily due to their temperature at the sheath edge and possi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::876c18d82dbc1cfca7f5287a7e7e312d
https://hal.archives-ouvertes.fr/hal-01865123

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Helium plasma modification of Si and Si3N4 thin films for advanced etch processes

Autor: Gilles Cunge, Emilie Despiau-Pujo, Jerome Dubois, Vahagn Martirosyan, Olivier Joubert

Publikováno v: Journal of Vacuum Science & Technology A. 36:041301

To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost infinite selectivity, an alternative method consisting of two sequential steps—surface modification in hydrogen or helium plasma followed by the selective rem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86f5f838899d2b1b5e0e100f14f0752a
https://doi.org/10.1116/1.5025152

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Simulations of radical and ion fluxes on a wafer in a Cl2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments

Autor: Patrick Plouhinec, Simone Cassette, Pascal Chabert, Shailendra Bansropun, Didier Thenot, Emilie Despiau-Pujo

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:693-701

A two-dimensional fluid model is used to study an industrial Ar/Cl2 inductively coupled plasma discharge designed to etch III-V samples. The effect of rf power, gas pressure, and chlorine content on the fluxes of reactive species reaching the wafer i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31266433dde60ab73314d4017f47f2c8
https://doi.org/10.1116/1.3437492

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Hydrogen plasmas processing of graphene surfaces

Autor: Emilie Despiau-Pujo, Gilles Cunge, David B. Graves, A. Davydova

Publikováno v: Plasma Chemistry and Plasma Processing
Plasma Chemistry and Plasma Processing, 2015, 36 (1), pp.213-229. ⟨10.1007/s11090-015-9683-0⟩
Plasma Chemistry and Plasma Processing, Springer Verlag, 2015, 36 (1), pp.213-229. ⟨10.1007/s11090-015-9683-0⟩

To assist the development of plasma processes to pattern graphene in a controlled way, interactions between hydrogen plasma species (H, H+, H2 +) and various types of graphene surfaces (monolayer, nanoribbons, multilayer) are investigated using atomi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2d59967478ba6405548e59dda010280
https://hal.univ-grenoble-alpes.fr/hal-01878016

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