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pro vyhledávání: '"Emilia W. Hirsch"'
Publikováno v:
Journal of Vacuum Science & Technology A. 38:023009
Etching of p-Si in 60 mTorr 10%Cl2/90%Ar Faraday-shielded inductively coupled high density plasmas was investigated under both ion-assisted etching (IAE) and photoassisted etching (PAE) conditions. Real-time etching rates and after-etching Si surface
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:061303
Various mechanisms have been proposed to explain photo-assisted etching (PAE) of Si, including photogenerated carrier-mediated etching, photon-stimulated desorption, and photon-induced damage (breaking of Si–Si bonds) caused mainly by vacuum ultrav