Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects

Autor: Rosana Rodriguez, M. Pedro, Javier Martin-Martinez, Vasileios Ntinas, Antonio Rubio, Albert Crespo-Yepes, Montserrat Nafria, Emili Salvador Aguilera, Georgios Ch. Sirakoulis

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commercialization, mainly owing to the fact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45d92db51d21c435c05ab2b3d2ce8298