Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Emile Sahouria"'
Autor:
Tuck Boon Chan, Puneet Gupta, Kwangsoo Han, Abde Ali Kagalwalla, Andrew B. Kahng, Emile Sahouria
Publikováno v:
2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a9e1743d924cee1d4a764f851668a2
https://doi.org/10.1109/iccad.2014.7001359
https://doi.org/10.1109/iccad.2014.7001359
Autor:
Timothy Lin, Jed H. Rankin, Emile Sahouria, Ahmad Elayat, Yuki Fujita, Steffen Schulze, Adam C. Smith, Peter Thwaite
Publikováno v:
SPIE Proceedings.
Multiresolution writing refers to a technique used to simplify the data in one or more of the write passes performed by a vector-based e-beam writer while maintaining the detail in at least one of the remaining layers. This technique has been demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9e85918ee1c4d0c6a6155da940774b
https://doi.org/10.1117/12.978836
https://doi.org/10.1117/12.978836
Publikováno v:
SPIE Proceedings.
The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity and subsequently longer mask writing times. We review the data preparation steps post tapeout, how they influence shot count as the main driv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47f633c0ba68216feacd9a0cf25acc93
https://doi.org/10.1117/12.902443
https://doi.org/10.1117/12.902443
Publikováno v:
SPIE Proceedings.
The increasing complexity of RET solutions with each new process node has increased the shot count of advanced photomasks. In particular, the introduction of inverse lithography masks represents a significant increase in mask complexity. Although sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6033df1dd99f0efe8efa685ccff0ac71
https://doi.org/10.1117/12.897779
https://doi.org/10.1117/12.897779
Autor:
Emile Sahouria
Publikováno v:
27th European Mask and Lithography Conference.
Mask writing techniques that employ multiple masking writing passes. A first writing pass is made to write a first shot pattern having a first resolution. A second writing pass is then made to write a second shot pattern having a second resolution fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01df87e8c38582443f343e6d49c5ba96
https://doi.org/10.1117/12.881929
https://doi.org/10.1117/12.881929
Autor:
Emile Sahouria, Amanda Bowhill
Publikováno v:
SPIE Proceedings.
We propose a new aperture stage for shaped e-beam exposure tools. This aperture stage is able to print an "L" shape in a single exposure shot. The aperture may be used in mask- and wafer-patterning e-beam tools. The physical and mechanical nature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f554b8384f4aceb59448f61137e957e7
https://doi.org/10.1117/12.867994
https://doi.org/10.1117/12.867994
Autor:
Amanda Bowhill, Steffen Schulze, Joan McCall, Suheil J. Zaatri, Michael Asturias, Aviram Tam, Neil DeBella, Tsafi Lapidot, Wei-Guo J. Lei, Yan Liu, Mark Wagner, Pradiptya Ghosh, Minyoung Park, Emile Sahouria, Khen Ofek
Publikováno v:
SPIE Proceedings.
With each new process technology node, chip designs increase in complexity and size, leading to a steady increase in data volumes. As a result, mask data prep flows require more computing resources to maintain the desired turn-around time (TAT) at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b4ea7f588e07340f35c5c00b27fc199
https://doi.org/10.1117/12.833443
https://doi.org/10.1117/12.833443
Autor:
Emile Sahouria, Travis Lewis, Kenneth Jantzen, Steffen Schulze, A. Nouh, Minyoung Park, Scott Goad
Publikováno v:
Photomask Technology 2008.
With each new process technology node chip designs increase in complexity and size, and mask data prep flows require more compute resources to maintain the desired turn around time (TAT) at a low cost. Securing highly scalable processing for each ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c687236c922f5ac3c466a6e78ddd4e
https://doi.org/10.1117/12.801544
https://doi.org/10.1117/12.801544
Autor:
Vincent Wiaux, Andres Torres, Alexander Tritchkov, Sergiy Komirenko, Ahmed Seoud, Petr E. Glotov, Emile Sahouria
Publikováno v:
Photomask Technology 2008.
Double patterning (DP) technology is one of the main candidates for RET of critical layers at 32nm hp. DP technology is a strong RET technique that must be considered throughout the IC design and post tapeout flows. We present a complete DP technolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac618b2c0d0a1e4a9758eb97162c473
https://doi.org/10.1117/12.801381
https://doi.org/10.1117/12.801381
Publikováno v:
SPIE Proceedings.
Increasing pattern density and the higher complexity of advanced OPC and RET technologies have lead to an explosion in mask data volume. This increased data volume leads to increased mask write times, inspection times, and costs. In the past, several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb498a2c751f4fc3bae8e1637cf8a7ec
https://doi.org/10.1117/12.799410
https://doi.org/10.1117/12.799410