Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Emil Tymicki"'
Publikováno v:
Sensors, Vol 21, Iss 18, p 6066 (2021)
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) tec
Externí odkaz:
https://doaj.org/article/5e549862010f474ba26ec81afef2098c
Publikováno v:
Sensors
Volume 21
Issue 18
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 6066, p 6066 (2021)
Volume 21
Issue 18
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 6066, p 6066 (2021)
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e07a8c8725c57256762c9ef294c80dd
Autor:
Zümray Vuslat Parlak, Norina Labude, Kamil Kaszyca, Svenja Wein, Karolina Schickle, Rainer Telle, Stephan Rütten, Emil Tymicki, Sabine Neuss, Rafał Zybała
Publikováno v:
Journal of Biomaterials Applications. 34:585-596
Cytocompatibility and hemocompatibility are essential features for tissue- and blood-contacting implants such as artificial heart valves, vascular grafts and stents. Platelet activation as the main...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79172aadf70000f5f5ba254c783bd506
https://doi.org/10.1177/0885328219861602
https://doi.org/10.1177/0885328219861602
Publikováno v:
International Journal of Mechanical Sciences. 144:858-864
Silicon carbide (SiC) is a promising material ideally suited for small-scaled devices deployed in harsh environments. SiC is brittle in bulk form, however, at small component length-scales plasticity is observed. A good understanding of deformation b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a41cfb8159f6b0c51918058e176465
https://doi.org/10.1016/j.ijmecsci.2017.11.021
https://doi.org/10.1016/j.ijmecsci.2017.11.021
Autor:
Krzysztof Grasza, Rafal Jakiela, Witold Dobrowolski, Mariusz Sochacki, B. Surma, Emil Tymicki, Katarzyna Racka, A. Avdonin
Publikováno v:
Journal of Crystal Growth. 413:86-93
Scandium is introduced into bulk SiC during the physical vapor transport (PVT) growth. SiC crystals grown with different Sc contents (from 0.5 wt% up to 2.5 wt%, added to the SiC source material) are studied. Magnetic properties of SiC doped with sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3f269af97afa331ed72e34947c09dd
https://doi.org/10.1016/j.jcrysgro.2014.11.035
https://doi.org/10.1016/j.jcrysgro.2014.11.035
Autor:
Katarzyna Racka, Marcin Pisarek, Jerzy Krupka, Emil Tymicki, Krzysztof Grasza, B. Surma, A. Avdonin, Rafal Jakiela, P. Skupiński
Publikováno v:
Journal of Crystal Growth. 401:677-680
SiC crystals grown by a Physical Vapor Transport (PVT) method in the presence of varying Ce impurity contents (from 0.1 wt% up to 2.5 wt%) added to SiC source material are investigated. The presence of the cerium vapor in the growth atmosphere is con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe9f877f1810422402089b4708e0464
https://doi.org/10.1016/j.jcrysgro.2014.02.041
https://doi.org/10.1016/j.jcrysgro.2014.02.041
Autor:
Marcin Pisarek, Dimitri Arvanitis, J. Mierczyk, Katarzyna Racka, Jerzy Krupka, Kinga Kościewicz, Krzysztof Grasza, Ryszard Diduszko, B. Surma, Dominika Teklinska, Rafal Jakiela, I.A. Kowalik, Emil Tymicki
Publikováno v:
Journal of Crystal Growth. 377:88-95
The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is investigated. The doping efficiency and, indirectly, the presence of the cerium vapour in the growth atmosph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9f664a8e3ef580d9a10312616bf73d
https://doi.org/10.1016/j.jcrysgro.2013.05.011
https://doi.org/10.1016/j.jcrysgro.2013.05.011
Autor:
Jerzy Krupka, Emil Tymicki, Ryszard Diduszko, M. Piersa, Katarzyna Racka, Dominika Teklinska, Krzysztof Grasza, P. Skupiński, Rafal Jakiela, Tadeusz Łukasiewicz, Kinga Kościewicz
Publikováno v:
Materials Science Forum. :29-32
In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a12bd82225781304f3ab00a5b9045977
https://doi.org/10.4028/www.scientific.net/msf.717-720.29
https://doi.org/10.4028/www.scientific.net/msf.717-720.29
Publikováno v:
Materials Science Forum. :16-19
A set of single crystal growth experiments was performed in the new resistively heated two-heater furnace, which plays the role of an induction furnace with a moving coil. In this new experimental setup we are able to control the shape of the crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555b3df161016743dd15fc4a4a0315e6
https://doi.org/10.4028/www.scientific.net/msf.679-680.16
https://doi.org/10.4028/www.scientific.net/msf.679-680.16
Autor:
Krzysztof Grasza, Kinga Kościewicz, Ryszard Diduszko, Maciej Gała, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Katarzyna Racka, Emil Tymicki, Rafał Bożek
Publikováno v:
Materials Science Forum. :17-20
In this work we present the growth of 4H-SiC crystals (2 inch in diameter) on the 8° off- axis C-face 6H-SiC seeds, inclined toward [11-20] direction. The growth of crystals by physical vapour transport method (PVT) was realized with the open seed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1345d05a703b51a394208a222f0a61
https://doi.org/10.4028/www.scientific.net/msf.645-648.17
https://doi.org/10.4028/www.scientific.net/msf.645-648.17