Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Emil S. Koteles"'
Autor:
Jian-Jun He, Emil S. Koteles
Publikováno v:
IEEE Instrumentation & Measurement Magazine. 7:33-42
A spectrometric transducer is a basic element of an optical measurement microsystem. This article explains the principle of operation of waveguide grating-based spectrometric transducers developed for telecommunication applications, their technologic
Publikováno v:
ResearcherID
We have investigated the influence of the electronic band structure on the exciton dynamics in GaAsP tensile-strained quantum wells. We have found that the exciton cooling time is notably reduced when the heavy- and light-hole excitons are degenerate
Autor:
Emil S. Koteles
Publikováno v:
Fiber and Integrated Optics. 18:211-244
A review is presented of state-of-the-art optical planar waveguide demultiplexers (DEMUXes), that is, phasars (arrayed waveguide) and etched grating devices designed for high-density (narrow channel spacing) wavelength division multiplexing (WDM) sys
Autor:
Yan Feng, Jian-Jun He, J.E. Haysom, Sylvain Charbonneau, Andre Delage, R. D. Goldberg, Philip J. Poole, Ian V. Mitchell, Emil S. Koteles
Publikováno v:
IEEE Journal of Quantum Electronics. 35:1354-1363
The fabrication of buried waveguides in InP-based quantum-well (QW) material through the use of implantation. Enhanced QW band edge blue-shifting is reported. First, the lateral selectivity of implantation-induced QW intermixing is investigated using
Autor:
R. D. Goldberg, Philip J. Poole, Ian V. Mitchell, S. Charbonneau, Y. Feng, J.E. Haysom, Emil S. Koteles, J.J. He
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:817-820
Quantum well (QW) intermixing using high-energy ion implantation is a promising technique for laterally selective, post-growth modification of a quantum well structure. In this work, we investigate the lateral selectivity of the technique, which is a
Autor:
Fang Yang, J.E. Haysom, Ian V. Mitchell, Michael Davies, P. G. Piva, G. C. Aers, Margaret Buchanan, R. D. Goldberg, Philip J. Poole, A. Delage, Sylvain Charbonneau, Emil S. Koteles, Yan Feng, Jian-Jun He
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:772-793
Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally results in an increase in the bandgap energy and is accompanied by changes in the refractive index. A technique, based on ion implantation-induced QW intermixing
Autor:
P. G. Piva, Z. R. Wasilewski, Jacques Beauvais, A. P. Roth, M. Dion, Philip J. Poole, Emil S. Koteles, G. C. Aers, Sylvain Charbonneau, Margaret Buchanan
Publikováno v:
Semiconductor Science and Technology. 9:2134-2137
Quantum well (QW) intermixing has been performed using low-energy broad-area ion implantation to increase the bandgap energy in a spatially selective manner. There is a maximum single dose beyond which further intermixing of the QWS is impeded by dam
Autor:
Margaret Buchanan, Sylvain Charbonneau, J. Beauvals, G. C. Aers, P. G. Piva, Philip J. Poole, R. D. Goldberg, Z. R. Wasilewski, A. P. Roth, Emil S. Koteles
Publikováno v:
Superlattices and Microstructures. 15:385-389
Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated
Autor:
Emil S. Koteles
Publikováno v:
Journal of Applied Physics. 73:8480-8484
We have developed an experimental technique for accurately determining energy‐band offsets in semiconductor quantum wells (QW) based on the fact that the magnitude of the ground‐state light‐hole (LH) energy is more sensitive to the depth of the
Autor:
Boris S. Elman, Andrew Silletti, Emil S. Koteles, B. Foley, A.N.M. Masum Choudhury, P. Melman
Publikováno v:
IEEE Photonics Technology Letters. 3:817-820
A two-wavelength demultiplexing metal-semiconductor-metal (MSM) waveguide photodetector has been fabricated using impurity-free vacancy diffusion and partial intermixing of an InGaAs/GaAs strained layer quantum well structure. The importance of growt