Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Emi, Kawashima"'
Autor:
Yuki Tsuruma, Emi Kawashima, Yoshikazu Nagasaki, Takashi Sekiya, Gaku Imamura, Genki Yoshikawa
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (I
Externí odkaz:
https://doaj.org/article/a8f182da53ed4910aae02a6a8505af98
Publikováno v:
SID Symposium Digest of Technical Papers. 53:16-19
Publikováno v:
Small methods. 6(9)
Highly ordered polycrystalline indium gallium oxide (PC-IGO) film is obtained by the crystallization of room temperature sputtered amorphous IGO on a hot plate at 350 °C for 1 h and then annealed for 1 h in an N
Autor:
Rostislav Velichko, Mamoru Furuta, Daiki Tanaka, Yuki Tsuruma, Toshihiro Matsumura, Daichi Sasaki, Taiki Kataoka, Yusaku Magari, Emi Kawashima, Kenta Shimpo
Publikováno v:
SID Symposium Digest of Technical Papers. 52:69-72
Autor:
Mami N. Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Johan van der Cingel, Mohammad R. T. Mofrad, Juan Paolo Soria Bermundo, Emi Kawashima, Shigekazu Tomai, Koki Yano, Yukiharu Uraoka
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065216-065216-10 (2016)
In a previous work, we reported the high field effect mobility of ZnO-doped In2O3 (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding
Externí odkaz:
https://doaj.org/article/a01243d929c1490da5b4b873b30cded9
Autor:
Emi, Kawashima
Publikováno v:
Human Welfare : HW. 11(1):85-96
Publikováno v:
Human Welfare : HW. 11(1):207-216
Publikováno v:
Human Welfare : HW. 10(1):129-137
Autor:
Mojtaba Abdi Jalebi, Hiroshi Tokairin, Kohei Shimizu, Emi Kawashima, Yuya Tanaka, Atsushi Matsuzaki, Hisao Ishii, Samuel D. Stranks, Ryotaro Nakazawa
Publikováno v:
Applied Physics Express. 14:071004
Autor:
Yuzo Shigesato, Yoshifumi Torigoshi, Junjun Jia, Emi Kawashima, Shin Ichi Nakamura, Ayaka Suko, Futoshi Utsuno
Publikováno v:
Applied Surface Science. 396:897-901
Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In2O3 phase, to a c-axis orie