Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Emese Huszár"'
Autor:
Thomas Edward James Edwards, Nadia Rohbeck, Emese Huszár, Keith Thomas, Barbara Putz, Mikhail Nikolayevich Polyakov, Xavier Maeder, Laszlo Pethö, Johann Michler
Publikováno v:
Advanced Science, Vol 9, Iss 34, Pp n/a-n/a (2022)
Abstract Nanocrystalline and nanotwinned materials achieve exceptional strengths through small grain sizes. Due to large areas of crystal interfaces, they are highly susceptible to grain growth and creep deformation, even at ambient temperatures. Her
Externí odkaz:
https://doaj.org/article/8d4ce310d04a4ad39b826a0147fc6879
Publikováno v:
Microscopy and Microanalysis. 28:1892-1894
Autor:
Emese Huszár, Jean-Paul Barnes, Johann Michler, Laszlo Pethö, Agnieszka Priebe, Thomas Edward James Edwards
Publikováno v:
Analytical Chemistry. 92:12518-12527
In this work, we present a comprehensive comparison of time-of-flight secondary ion mass spectrometry (TOF-SIMS) and scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy (STEM/EDX), which are currently the most
Autor:
Peter Schweizer, Amit Sharma, Laszlo Pethö, Emese Huszar, Lilian Maria Vogl, Johann Michler, Xavier Maeder
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-6 (2023)
Abstract Diffusion is one of the most important phenomena studied in science ranging from physics to biology and, in abstract form, even in social sciences. In the field of materials science, diffusion in crystalline solids is of particular interest
Externí odkaz:
https://doaj.org/article/73a17e14f533454a8222aacdad4f6515
Autor:
Barbara Putz, Thomas E.J. Edwards, Emese Huszar, Laszlo Pethö, Patrice Kreiml, Megan J. Cordill, Dominique Thiaudiere, Stephane Chiroli, Fatih Zighem, Damien Faurie, Pierre-Olivier Renault, Johann Michler
Publikováno v:
Materials & Design, Vol 232, Iss , Pp 112081- (2023)
A unique deposition approach combining atomic layer deposition (ALD) and magnetron sputtering was used to fabricate a series of thin film multilayer structures of Al (50 nm) and Al2O3 (ALD, 2.4–9.4 nm) on flexible polymer substrates without breakin
Externí odkaz:
https://doaj.org/article/996a783a30b24c239f30f2b793459869