Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Emek Yesilada"'
Autor:
G. Kerrien, Emek Yesilada, Sebastien Cremer, Vincent Farys, B. Orlando, N. Zeggaoui, Vlad Liubich, Alexander Tritchkov
Publikováno v:
SPIE Proceedings.
Si-Photonics is the technology in which data is transferred by photons (i. e. light). On a Photonic Integrated Circuit (PIC), light is processed and routed on a chip by means of optical waveguides. The Si-Photonics waveguides functionality is determi
Autor:
Ana-Maria Armeanu, Isabelle Schanen, Frederic Huguennet, Michael Chomat, Ingo Bork, Peter Buck, Nacer Zine El Abidine, Frank Sundermann, Vincent Farys, Emek Yesilada
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2016, 15 (2), pp.021011
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2016, 15 (2), pp.021011
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2016, 15 (2), pp.021011
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2016, 15 (2), pp.021011
In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::018cf9ff84893eaec87fa0d733cc8a68
https://hal.science/hal-02025168
https://hal.science/hal-02025168
Autor:
Michael Chomat, Ingo Bork, Peter Buck, Frederic Huguennet, Vincent Farys, Isabelle Schanen, Ana-Maria Armeanu, Frank Sundermann, Nacer Zine El Abidine, Emek Yesilada
Publikováno v:
SPIE Proceedings.
In a previous work [1] we demonstrated that current OPC model assuming the mask pattern to be analogous to the designed data is no longer valid. Indeed as depicted in figure 1, an extreme case of line-end shortening shows a gap up to 10 nm difference
Autor:
Emek Yesilada, Mazen Saied, Franck Foussadier, Yves Rody, Christian Gardin, Jerome Belledent, Jonathan Planchot, Frederic Robert, Amandine Borjon, Christophe Couderc, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
Microelectronic Engineering. 84:770-773
With the continuous reduction of layout dimension, critical dimension control becomes more and more tricky. Being one contribution of critical dimension variation, etch bias correction needs to get more accurate. The correction by rule-based optical
Autor:
Emek Yesilada, G. Kerrien, Catherine Martinelli, Florent Vautrin, Laurent Le Cam, Christophe Couderc, Jerome Belledent, Frank Sundermann, Patrick Schiavone, Franck Foussadier, Yorick Trouiller, Jonathan Planchot, Jean-Christophe Urbani, Patrick Montgomery, Mazen Saied, Frederic Robert, Amandine Borjon, Bill Willkinson, Yves Rody, Christian Gardin
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
International audience; Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Inde
Autor:
Alexandre Villaret, James Word, Guillaume Landie, N. Zeggaoui, Emek Yesilada, Vincent Farys, Alexander Tritchkov
Publikováno v:
SPIE Proceedings.
The 14nm node designs is getting more sophisticated, and printability issues become more critical which need more advanced techniques to fix. One of the most critical processes is the contact patterning due to the very aggressive design rules and the
Autor:
P. Fanton, Emek Yesilada, Paolo Parisi, Laurent Tetar, Pierre-Jerome Goirand, Narayani Narasimhan, Vijayakumar Ramachandran, Sagar A. Kekare, Jean-Christophe Le Denmat
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This paper reports on a new approach to capture the impact of marginal pattern geometries on occurrence of systematic yield-limiting defects. Layout profiling and Hot-Spot checking techniques were used to mark new incoming device layout for regions t
Autor:
Christophe Suzor, Nelly Feldman, Olivia Riewer, Salvatore Talluto, Michel Vallet, Emek Yesilada, Jean-Christophe Le Denmat
Publikováno v:
SPIE Proceedings.
Starting from the 45nm technology node, systematic defectivity has a significant impact on device yield loss with each new technology node. The effort required to achieve patterning maturity with zero yield detractor is also significantly increasing
Autor:
A. Szucs, Vincent Farys, L. Depre, Sanjay Kapasi, Emek Yesilada, Cécile Gourgon, Orion Mouraille, Frank A. J. M. Driessen, M. Besacier, Jonathan Planchot
Publikováno v:
SPIE Proceedings.
The objective of this paper is to extend the ability of a more stable overall process control for the 28 nm Metal layer. A method to better control complex 2D-layout structures for this node is described. Challenges are coming from the fact that the
Autor:
Lei Wang, L. Depre, Mu Feng, Jean-Christophe Michel, Frederic Robert, Elodie Sungauer, Sanjay Kapasi, Song Lan, Jean-Christophe Le-Denmat, Emek Yesilada
Publikováno v:
SPIE Proceedings.
From 28nm technology node and below, Optical Proximity Correction (OPC) needs to take into account light scattering effects from prior layers when bottom anti-reflective coating (BARC) is not used, which is typical for implant layers. In this paper,