Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Emanuele Uccelli"'
Autor:
Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, Heike Riel
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 176-183 (2015)
In this paper, we introduce p-channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III-V nanowire integration on Si substrates
Externí odkaz:
https://doaj.org/article/a1b08e3ce7e24b2696723827b13cd2f9
Autor:
Sara Martí-Sánchez, Sebastian Heedt, Peter Krogstrup, Alexandra Fursina, Timm Swoboda, Leo P. Kouwenhoven, Francesco Borsoi, Pavel Aseev, Jordi Arbiol, Joachim E. Sestoft, Luca Binci, R. Koops, Guanzhong Wang, Emanuele Uccelli, Filip Krizek, Frenk Boekhout, Philippe Caroff
Publikováno v:
Nano Letters, 1, 19, 218-227
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters
Aseev, P, Fursina, A, Boekhout, F, Krizek, F, Sestoft, J E, Borsoi, F, Heedt, S, Wang, G, Binci, L, Marti-Sanchez, S, Swoboda, T, Koops, R, Uccelli, E, Arbiol, J, Krogstrup, P, Kouwenhoven, L P & Caroff, P 2019, ' Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks ', Nano Letters, vol. 19, no. 1, pp. 218-227 . https://doi.org/10.1021/acs.nanolett.8b03733
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19(1)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters
Aseev, P, Fursina, A, Boekhout, F, Krizek, F, Sestoft, J E, Borsoi, F, Heedt, S, Wang, G, Binci, L, Marti-Sanchez, S, Swoboda, T, Koops, R, Uccelli, E, Arbiol, J, Krogstrup, P, Kouwenhoven, L P & Caroff, P 2019, ' Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks ', Nano Letters, vol. 19, no. 1, pp. 218-227 . https://doi.org/10.1021/acs.nanolett.8b03733
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19(1)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110d9841086fd09bf73bec464f975344
http://resolver.tudelft.nl/uuid:b64f439a-9ef2-413c-9033-66601d7fd295
http://resolver.tudelft.nl/uuid:b64f439a-9ef2-413c-9033-66601d7fd295
Autor:
N. Daix, Vladimir Djara, Jean Fompeyrine, Lukas Czornomaz, Marilyne Sousa, Emanuele Uccelli, Daniele Caimi, Veeresh Deshpande
Publikováno v:
Solid-State Electronics. 115:103-108
We present a tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture. The fabricated devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018/cm3 obtained by metal organic chemical vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2a263fc36974812fb80febf6cf65cc
https://doi.org/10.1016/j.sse.2015.08.018
https://doi.org/10.1016/j.sse.2015.08.018
Autor:
Jordi Arbiol, Yu Liu, Tomaš Stankevič, Peter Krogstrup, Sara Martí-Sánchez, Emanuele Uccelli, Sabbir A. Khan, Saulius Vaitiekenas, Filip Krizek, Joachim E. Sestoft, Frenk Boekhout, Leo P. Kouwenhoven, Lucas Casparis, Alexander M. Whiticar, Pavel Aseev, Alexandra Fursina, Charles Marcus, R. Koops
Publikováno v:
Physical review materials
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Physical Review Materials, 2(9)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review Materials
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Physical Review Materials, 2(9)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review Materials
arXiv:1802.07808v2
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1f8e2b7aa398c4a8828f919418d3e8
http://resolver.tudelft.nl/uuid:d8a087f0-1abd-4163-b405-1705c14a9f00
http://resolver.tudelft.nl/uuid:d8a087f0-1abd-4163-b405-1705c14a9f00
Autor:
Marilyne Sousa, Youri Popoff, Daniele Caimi, Chiara Marchiori, Alexander A. Demkov, Lukas Czornomaz, Heinz Siegwart, Kristy J. Kormondy, Patrick Ponath, Stefan Abel, Florian Fallegger, Emanuele Uccelli, Jean Fompeyrine, Agham Posadas
Publikováno v:
Microelectronic Engineering. 147:215-218
Display Omitted Highly crystalline BaTiO3 was integrated on Si using molecular beam epitaxy.Electro-optic response was evaluated for a-axis, c-axis, and mixed films.Increased a-axis fraction correlated with increased electro-optic response.Post-depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7fe154496c8f9369dbf3978a9055601
https://doi.org/10.1016/j.mee.2015.04.041
https://doi.org/10.1016/j.mee.2015.04.041
Autor:
Vladimir Djara, Nikola Dordevic, Marilyne Sousa, Chiara Marchiori, C. Rossel, Daniele Caimi, Veeresh Deshpande, Jean Fompeyrine, Lukas Czornomaz, Emanuele Uccelli
Publikováno v:
Microelectronic Engineering. 147:231-234
Display Omitted First demonstration of high-k/In0.53Ga0.47As gate stack formed by PEALD.Optical and electrical characterization of Al2O3 and HfO2 materials formed by PEALD.Competitive Dit achieved with HF and with (NH4)2S surface preparations. We dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef1c9117dacd2f787519ffb117a7763d
https://doi.org/10.1016/j.mee.2015.04.102
https://doi.org/10.1016/j.mee.2015.04.102
Autor:
Heinz Schmid, Heike Riel, Mattias Borg, Davide Cutaia, Lynne Gignac, Kirsten E. Moselund, Emanuele Uccelli, Chris Breslin, Siegfried Karg
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 176-183 (2015)
In this paper, we introduce ${p}$ -channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III–V nanowire integration on Si sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26a094acefdd5dbb31e88fb97eb4fb91
https://doi.org/10.1109/jeds.2015.2388793
https://doi.org/10.1109/jeds.2015.2388793
Autor:
Jean-Michel Hartmann, Vladimir Djara, N. Daix, Jean Fompeyrine, Lukas Czornomaz, C. Rossel, Emanuele Uccelli, Heinz Siegwart, Daniele Caimi, Marilyne Sousa, Chiara Marchiori
Publikováno v:
ECS Transactions. 64:199-209
1. Introduction As Si-CMOS scaling is becoming increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving an increasing interest as channel material for nFET [1,2]. Together with SiGe as a pFET channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4c25000b8c8855aaa51f976f1c79e4a
https://doi.org/10.1149/06405.0199ecst
https://doi.org/10.1149/06405.0199ecst
Autor:
Debora Pierucci, Mathieu G. Silly, Chiara Marchiori, Stefan Abel, Fausto Sirotti, M. El Kazzi, Lukas Czornomaz, M. Sousa, J. Fompeyrine, Emanuele Uccelli
Publikováno v:
ECS Transactions. 58:369-378
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280e378233705442951edf83aafd56d7
https://doi.org/10.1149/05807.0369ecst
https://doi.org/10.1149/05807.0369ecst
Autor:
Emanuele Uccelli, Thomas Kreiliger, H. von Känel, Giovanni Isella, Antonia Neels, Elisabeth Müller, Philippe Niedermann, Jean Fompeyrine, Alex Dommann, M. Richter, Fabio Isa, Claudiu V. Falub, Alfonso G. Taboada
Publikováno v:
MRS Proceedings. 1538:283-289
We report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3692afa3f108667c20d473574bdaf4db
https://doi.org/10.1557/opl.2013.842
https://doi.org/10.1557/opl.2013.842