Zobrazeno 1 - 10
of 236
pro vyhledávání: '"Emanuele Pelucchi"'
Autor:
Salvador A. Medina-Rangel, Nicola Maraviglia, John O’Hara, Artem S. Vorobev, Simone Iadanza, Emanuele Pelucchi, Liam O’Faolain
Publikováno v:
Photonics, Vol 11, Iss 9, p 800 (2024)
SU-8 is an emerging polymer material for integrated optical circuits that has demonstrated good structural properties in a cryogenic environment. In this article, we investigate the thermo-optical properties of SU-8 for a wavelength λ=850 nm, from r
Externí odkaz:
https://doaj.org/article/de99d27f9e06490996afa90e68e30d0a
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Generation of polarization-entangled photons from quantum dots via the biexciton-exciton recombination cascade is complicated by the presence of an energy splitting between the intermediate excitonic levels, which severely degrades the quali
Externí odkaz:
https://doaj.org/article/486249a89ba64505b640417bc706cf34
Autor:
Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley
Publikováno v:
Crystals, Vol 11, Iss 11, p 1348 (2021)
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating Ga
Externí odkaz:
https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
Autor:
Jing Zhang, Grigorij Muliuk, Joan Juvert, Sulakshna Kumari, Jeroen Goyvaerts, Bahawal Haq, Camiel Op de Beeck, Bart Kuyken, Geert Morthier, Dries Van Thourhout, Roel Baets, Guy Lepage, Peter Verheyen, Joris Van Campenhout, Agnieszka Gocalinska, James O’Callaghan, Emanuele Pelucchi, Kevin Thomas, Brian Corbett, António José Trindade, Gunther Roelkens
Publikováno v:
APL Photonics, Vol 4, Iss 11, Pp 110803-110803-10 (2019)
Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs
Externí odkaz:
https://doaj.org/article/fa68af41d5e340cf9bbc4a85837a42dd
Autor:
Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity
Publikováno v:
Crystals, Vol 11, Iss 2, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi
Externí odkaz:
https://doaj.org/article/b4687f6106c14ab2a814c4d1d2f9e4d7
Autor:
Ruggero Loi, James O'Callaghan, Brendan Roycroft, Cedric Robert, Alin Fecioru, Antonio Jose Trindade, Agnieszka Gocalinska, Emanuele Pelucchi, Christopher A. Bower, Brian Corbett
Publikováno v:
IEEE Photonics Journal, Vol 8, Iss 6, Pp 1-10 (2016)
InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP subs
Externí odkaz:
https://doaj.org/article/ef0b3f48152645b5b84a4c2de38b6ce0
Autor:
Jing Zhang, Laurens Bogaert, Bahawal Haq, Ruohui Wang, Bozena Matuskova, Johanna Rimböck, Stefan Ertl, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Joris Van Campenhout, Guy Lepage, Peter Verheyen, Geert Morthier, Gunther Roelkens
Publikováno v:
IEEE Photonics Technology Letters. 35:593-596
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8431d6f09ae845a5067bb163fc8df8
https://doi.org/10.1109/lpt.2023.3263279
https://doi.org/10.1109/lpt.2023.3263279
Autor:
Kristina M. Holsgrove, Tamsin I. O’Reilly, Simone Varo, Agnieszka Gocalinska, Gediminas Juska, Demie M. Kepaptsoglou, Emanuele Pelucchi, Miryam Arredondo
Publikováno v:
Holsgrove, K M, O’Reilly, T I, Varo, S, Gocalinska, A, Juska, G, Kepaptsoglou, D M, Pelucchi, E & Arredondo, M 2022, ' Towards 3D characterisation of site-controlled InGaAs pyramidal QDs at the nanoscale ', Journal of Materials Science . https://doi.org/10.1007/s10853-022-07654-2
In this work, we report an extensive investigation via transmission electron microscopy (TEM) techniques of InGaAs/GaAs pyramidal quantum dots (PQDs), a unique site-controlled family of quantum emitters that have proven to be excellent sources of sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dd7234d7d6049ee3abc69adf2014abf
https://eprints.whiterose.ac.uk/190564/1/s10853_022_07654_2.pdf
https://eprints.whiterose.ac.uk/190564/1/s10853_022_07654_2.pdf
Autor:
Agnieszka Gocalinska, Simone Varo, Gediminas Juska, Iman Ranjbar Jahromi, Andrea Di Falco, Emanuele Pelucchi, Xin Li
Publikováno v:
ACS Applied Nano Materials
Funding: This research was supported by Science Foundation Ireland under Grant Nos. 15/IA/2864, and 12/RC/2276_P2. ADF acknowledges support from EPSRC (EP/L017008/1) and ERC (Grant No. 819346). The engineering of the surrounding photonic environment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c346093d5e426be0cc624c5be8ac65f0
https://doi.org/10.1021/acsanm.0c02969
https://doi.org/10.1021/acsanm.0c02969
Autor:
Jing Zhang, Clemens J. Kruckel, Bahawal Haq, Bozena Matuskova, Johanna Rimbock, Stefan Ertl, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Joris Van Campenhout, Guy Lepage, Peter Verheyen, Dries Van Thourhout, Roel Baets, Gunther Roelkens
Publikováno v:
IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022)
We demonstrate an array of C-band high-speed silicon MZI switches with integrated III-V amplifiers on the imec iSiPP50G platform using micro-transfer printing. The integrated amplifiers exhibit 10 dB optical gain which enables lossless switching and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e26af30ee1a5ae2901e9915771e9004
https://doi.org/10.1109/ectc51906.2022.00077
https://doi.org/10.1109/ectc51906.2022.00077