Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Emanuele Grilli"'
Autor:
Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of p
Externí odkaz:
https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c
Autor:
Fabio Pezzoli, P. Jahandar, S De Cesari, Andrea Balocchi, Xavier Marie, Maksym Myronov, Emanuele Grilli, Thierry Amand, E Vitiello
Publikováno v:
Physical Review B. 99
We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9dba832c4a070c4c8481f309c0aa448
https://doi.org/10.1103/physrevb.99.035202
https://doi.org/10.1103/physrevb.99.035202
Autor:
R. Woscholski, Emanuele Grilli, E. Gatti, Giovanni Isella, Pengki Li, Hanan Dery, Christoph Lange, Dhara Trivedi, Sangam Chatterjee, F. Ciccacci, Yang Song, Fabio Pezzoli, Stefano Cecchi, Mario Guzzi, Anna Giorgioni, Federico Bottegoni, N. S. Köster, Alberto Ferrari
Publikováno v:
ECS Transactions. 50:831-836
Ge is emerging as an interesting material for spintronic applications. We demonstrate that in SiGe heterostructures strain and quantum confinement effects can be used to tailor spin related properties enhancing the spin polarization of injected carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a737c97e41c4fee3b1f038f54bc785
https://doi.org/10.1149/05009.0831ecst
https://doi.org/10.1149/05009.0831ecst
Autor:
E Vitiello, Emanuele Grilli, S Paleari, Anna Giorgioni, Stefano Cecchi, Marco Fanciulli, Fabio Pezzoli, Wolfgang Jantsch, Giovanni Isella
Publikováno v:
Nature Communications
Nature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
Nature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59d9257abed36db564393e213caedfb0
http://hdl.handle.net/10281/149475
http://hdl.handle.net/10281/149475
Autor:
E. Gatti, Fabio Pezzoli, Paolo Biagioni, Ross W. Millar, Leo Miglio, Emanuele Grilli, Emiliano Bonera, Giovanni Isella, Anna Giorgioni, Fabio Isa, Kevin Gallacher, Douglas J. Paul
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a1cc80e3ac2389d88d9aad2edcfea11
http://hdl.handle.net/11311/994890
http://hdl.handle.net/11311/994890
Autor:
Stefano Sanguinetti, Andrea Scaccabarozzi, Emanuele Grilli, Sergio Bietti, Claudio Somaschini
Publikováno v:
Crystal Growth & Design. 12:1180-1184
Complex GaAs/AlGaAs nanostructures, constituted by a quantum dot sitting on a quantum disk, are fabricated. This was made possible by droplet epitaxy growth technique which allows for fine control of the crystallization kinetics, by means of As flux
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e17a5f9f25c57cf16354d82a5c1149eb
https://doi.org/10.1021/cg201153d
https://doi.org/10.1021/cg201153d
Autor:
Fabio Pezzoli, Emanuele Grilli, Mario Guzzi, D. Colombo, L Miglio, F. Gramm, R. Gatti, Francesca Bragheri, A. Trita, Vittorio Degiorgio, H. von Känel, M. Döbeli, Elisabeth Müller, Giovanni Isella, Daniel Chrastina, Emiliano Bonera, Ilaria Cristiani
Publikováno v:
Optics Communications. 282:4716-4722
Silicon-rich SiGe alloys represent a promising platform for the development of large-area single-mode optical waveguides to be integrated in silicon-based optical circuits. We find that SiGe layers epitaxially grown on Si successfully guide radiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5aeb48e77ab429f570bf27825fcc3e29
https://doi.org/10.1016/j.optcom.2009.09.026
https://doi.org/10.1016/j.optcom.2009.09.026
Autor:
E. Wintersberger, Fabio Pezzoli, Emiliano Bonera, J. Stangl, Emanuele Grilli, G. Bauer, Stefano Sanguinetti, Mario Guzzi, H. von Känel, Giovanni Isella, Daniel Chrastina
Publikováno v:
Materials Science in Semiconductor Processing. 11:279-284
A procedure for the quantitative measurement of composition and strain in epitaxial Si 1 - x Ge x / Si heterostructures by means of Raman spectroscopy for any Ge concentration is presented. The calibration of the parameters of this procedure involved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45635e4cab4d7d67610ff6e8e9e50a53
https://doi.org/10.1016/j.mssp.2008.09.012
https://doi.org/10.1016/j.mssp.2008.09.012
Autor:
Alessia Le Donne, Chiara Busto, Luca Longoni, Simona Binetti, Emanuele Grilli, Andrea Rolfi, Sergio Pellegrino, Davide Scorticati, Beat Neuenschwander, Beat Jäggi
Publikováno v:
Scopus-Elsevier
Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::095779c5ec483ec4e847e0f90cdfe8d8
https://resolver.caltech.edu/CaltechAUTHORS:20191002-150220868
https://resolver.caltech.edu/CaltechAUTHORS:20191002-150220868
Autor:
Emanuele Grilli, Jacopo Frigerio, Anna Giorgioni, Giovanni Isella, E Vitiello, Emiliano Bonera, E. Gatti, S De Cesari, Michele Virgilio, Fabio Pezzoli
Epitaxial growth of Ge films on Si introduces an in-plane biaxial tensile strain, opening up Ge applications in photonic, as recently demonstrated by the room temperature lasing action in Ge-on-Si heterostructure. The optical access to the direct gap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83c12eb84b72fd6829233a1b8c8a7901
http://hdl.handle.net/11311/971678
http://hdl.handle.net/11311/971678