Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Emanuele Confalonieri"'
Autor:
Emanuele Confalonieri, Danilo Caraccio, Marco Dallabora, Paolo Amato, Daniele Balluchi, L. Porzio
Publikováno v:
2016 Mobile System Technologies Workshop (MST).
The evolution of mobile systems from hardware and software standpoints, and their increased use in our daily life has direct implications on all the sub-systems of a smartphone. The storage sub-system, in particular, has changed deeply over the years
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9b6ce3917922a6901cae97071cb922c
https://doi.org/10.1109/mst.2016.17
https://doi.org/10.1109/mst.2016.17
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
Embedded Multi Media Card (eMMC) has become the mainstream embedded storage system for mobile devices like Smartphones and Tablets and it is gaining traction in other products (e.g. Wearables) and segments (e.g. Automotive). eMMC devices are complex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c91f7d1b4df8cc32fbd2022076a8e3ac
https://doi.org/10.1109/imw.2015.7150276
https://doi.org/10.1109/imw.2015.7150276
Publikováno v:
2015 Mobile Systems Technologies Workshop (MST).
The mobile market will continue to drive the memory industry in the up-coming years, with the highest growth for both system memory and storage. It is expected that handsets and tablets will represent more than 40% of DRAM and NANDindustry bit demand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f7a9ee352157021e3c681fe0cb21ee8
https://doi.org/10.1109/mst.2015.14
https://doi.org/10.1109/mst.2015.14
Autor:
Martti Voutilainen, Joni Jantunen, Sergey Boldyrev, Emanuele Confalonieri, Jarmo Tapani Arponen
Publikováno v:
2012 4th IEEE International Memory Workshop.
In the simplest form the RF memory tag system consists of a stand-alone memory tag with a large non-volatile storage memory (capacity in gigabits), and a reader/writer device. The reader/writer device powers the tag wirelessly during data-transfer. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a5a1425bde149b9d7d3437e4c84f37
https://doi.org/10.1109/imw.2012.6213678
https://doi.org/10.1109/imw.2012.6213678
Autor:
Corrado Villa, M. La Placa, Andrea Scavuzzo, Stefan Schippers, Michelangelo Pisasale, N. Del Gatto, Vincenzo Dima, E. Bolandrina, Alessandro Magnavacca, A. Martinelli, F. Mastroianni, M. Gaitiotti, Emanuele Confalonieri, Salvatore Polizzi, Marco Sforzin, Daniele Vimercati, B. Calandrino, Mauro Sali, Carlo Lisi, Antonio Geraci, M. Scardaci
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
A 1.8 V 256 Mb 2b/cell NOR flash memory is designed in a 130 nm technology. A fast gate-voltage-ramp constant-current-reading concept is implemented to obtain a robust read-while-write/erase function and 125 MHz burst read frequency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11cd716540c31a2b0baaa8edc1511628
https://doi.org/10.1109/isscc.2005.1493864
https://doi.org/10.1109/isscc.2005.1493864