Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Emanuele Baravelli"'
Publikováno v:
IEEE Transactions on Electron Devices. 61:473-478
This paper investigates feasible inverter configurations based on co-optimized n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/Al0.05Ga0.95Sb platform. Based on 3-D full-quantum simulations, the considered devices fe
Publikováno v:
Solid-State Electronics. 108:104-109
We report for the first time a quantum mechanical simulation study of gate capacitance components in aggressively scaled InAs Nanowire Tunnel Field-Effect Transistors. It will be shown that the gate-drain capacitance exhibits the same functional depe
Autor:
Elena Gnani, Giorgio Baccarani, Antonio Gnudi, Susanna Reggiani, Roberto Grassi, Emanuele Baravelli
Publikováno v:
IEEE Transactions on Electron Devices. 61:178-185
Design of a suitable technology platform is carried out in this paper for co-integration of simultaneously optimized n- and p-type tunnel field-effect transistors (TFETs). InAs/AlxGa1-xSb heterostructures are considered, and a 3-D full-quantum simula
Autor:
Massimo Ruzzene, Emanuele Baravelli
Publikováno v:
Journal of Sound and Vibration. 332:6562-6579
The paper reports on a structural concept for high stiffness and high damping performance. A stiff external frame and an internal resonating lattice are combined in a beam-like assembly which is characterized by high frequency bandgaps and tuned vibr
Autor:
Antonio Gnudi, Pasquale Maiorano, Emanuele Baravelli, Giorgio Baccarani, Elena Gnani, Susanna Reggiani
In this work, an overview is given on the prospects and challenges of two novel device concepts,namely the Tunnel FET (TFET) and the Superlattice FET (SL-FET). The optimization effort ofhomo- and hetero-junction TFETs carried out so far shows that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9f691d984ae02ee1d26bb1b4583ddd9
http://hdl.handle.net/11585/588883
http://hdl.handle.net/11585/588883
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 58:1430-1441
A frequency-steerable acoustic transducer (FSAT) is employed for imaging of damage in plates through guided wave inspection. The FSAT is a shaped array with a spatial distribution that defines a spiral in wavenumber space. Its resulting frequency-dep
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 57:2734-2741
This paper presents a novel time-frequency procedure based on the warped frequency transform (WFT) to process multi-mode and dispersive Lamb waves for structural health monitoring (SHM) applications. The proposed signal processing technique is applie
Publikováno v:
Solid-State Electronics. 54:909-918
Replacing the conventional MOSFET architecture with multiple gate structures like the FinFET can improve scalability of SRAM circuits, especially in low-voltage/low-power applications. The impact of fin line-edge roughness (LER) on noise margins of L
Autor:
Nicolo'Attilio Speciale, K. De Meyer, Malgorzata Jurczak, Rita Rooyackers, Emanuele Baravelli, Abhisek Dixit
Publikováno v:
IEEE Transactions on Electron Devices. 54:2466-2474
As a result of CMOS scaling, the critical dimension (CD) of integrated circuits has been shrinking. At sub-45 nm nodes, in which FinFET is a viable device architecture, line-edge roughness (LER) in current Si-based technologies forms a significant fr
Publikováno v:
ESSDERC
ESSCIRC
ESSCIRC
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d018160a97e79b08a5cc960c318f770
http://hdl.handle.net/11585/555718
http://hdl.handle.net/11585/555718