Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Emanuela, Schilirò"'
Autor:
Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 133 (2024)
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative
Externí odkaz:
https://doaj.org/article/a776ae412cb94623a73bafba73d36357
Autor:
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 1, Pp n/a-n/a (2023)
Abstract In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H‐SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1
Externí odkaz:
https://doaj.org/article/beba597e3a5747f7aa7169b6c82d0d34
Autor:
Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte
Publikováno v:
Materials, Vol 16, Iss 16, p 5638 (2023)
Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO2 interlayer
Externí odkaz:
https://doaj.org/article/9ba78217186744c18f851274bb5beb3d
Autor:
Emanuela Schilirò, Patrick Fiorenza, Corrado Bongiorno, Corrado Spinella, Salvatore Di Franco, Giuseppe Greco, Raffaella Lo Nigro, Fabrizio Roccaforte
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125017-125017-7 (2020)
In this article, electron trapping in aluminum oxide (Al2O3) thin films grown by plasma enhanced atomic layer deposition on AlGaN/GaN heterostructures has been studied and a correlation with the presence of oxygen defects in the film has been provide
Externí odkaz:
https://doaj.org/article/474a3abe83964f0fa0c1fad2737437d3
Autor:
Salvatore E. Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M. Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 12, Iss 2, p 182 (2022)
In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8
Externí odkaz:
https://doaj.org/article/1d9e14c8f66f4f799c4551961a35bb86
Publikováno v:
Materials, Vol 15, Iss 3, p 830 (2022)
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, sinc
Externí odkaz:
https://doaj.org/article/a62216c3ef6c4915b224c0c2d2de6a02
Autor:
Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro
Publikováno v:
Nanomaterials, Vol 11, Iss 12, p 3316 (2021)
This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN). A uniform and conformal co
Externí odkaz:
https://doaj.org/article/a9858e6ab40d4aa7b1d090ced9cb63e6
Publikováno v:
Applied Sciences, Vol 11, Iss 22, p 11052 (2021)
Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materia
Externí odkaz:
https://doaj.org/article/69690cf09bd44f228ad8bb72277bc293
Autor:
Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 467-474 (2017)
Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable ca
Externí odkaz:
https://doaj.org/article/9182ed7f85ef4fc7a7234d476038a62f
Autor:
Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro
Publikováno v:
ACS Applied Electronic Materials. 4:406-415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc96cba1884b269b26ef922250ac2acf
https://doi.org/10.1021/acsaelm.1c01059
https://doi.org/10.1021/acsaelm.1c01059