Zobrazeno 1 - 10
of 344
pro vyhledávání: '"Emanuel, I"'
Publikováno v:
In Coastal Engineering January 2023 179
Autor:
Andelin, Emanuel I., Rusu, Alina S.
Publikováno v:
In Procedia - Social and Behavioral Sciences 3 December 2015 209:61-66
Autor:
Andelin, Emanuel I., Rusu, Alina S.
Publikováno v:
In Procedia - Social and Behavioral Sciences 3 December 2015 209:46-52
Autor:
Alison M. Strack, Ester Carballo-Jane, Sheng-ping Wang, Jiyan Xue, Xiaoli Ping, Lesley Ann McNamara, Anil Thankappan, Olga Price, Michael Wolff, T.J. Wu, Douglas Kawka, Michele Mariano, Charlotte Burton, Ching H. Chang, Jing Chen, John Menke, Silvi Luell, Emanuel I. Zycband, Xinchun Tong, Richard Raubertas, Carl P. Sparrow, Brian Hubbard, John Woods, Gary O'Neill, M. Gerard Waters, Ayesha Sitlani
Publikováno v:
Journal of Lipid Research, Vol 54, Iss 1, Pp 177-188 (2013)
The use of nicotinic acid to treat dyslipidemia is limited by induction of a “flushing” response, mediated in part by the interaction of prostaglandin D2 (PGD2) with its G-protein coupled receptor, DP1 (Ptgdr). The impact of DP1 blockade (genetic
Externí odkaz:
https://doaj.org/article/07e92c10466c4bb5bf9831676c97ce7f
Autor:
Ringel, Emanuel I., Mode, Charles J.
Publikováno v:
Operations Research, 1994 Mar 01. 42(2), 262-273.
Externí odkaz:
https://www.jstor.org/stable/171670
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 1989 Jun . 86(12), 4549-4553.
Externí odkaz:
https://www.jstor.org/stable/33729
Autor:
Dan Mocuta, E. Chiu, Nadine Collaert, Roger Loo, Robert Langer, A. De Keersgieter, Paola Favia, Liesbeth Witters, Hiroaki Arimura, Frank Holsteyns, Farid Sebaai, Kathy Barla, E. Vancoille, Andreas Schulze, Tom Schram, V. De Heyn, Steven Bilodeau, Andriy Hikavyy, Peter Storck, Jerome Mitard, A. Opdebeeck, Katia Devriendt, Emanuel I. Cooper, Christa Vrancken, Ruben R. Lieten, Geert Eneman, Kurt Wostyn, Alexey Milenin, Niamh Waldron
Publikováno v:
IEEE Transactions on Electron Devices. 64:4587-4593
Strained Ge p-channel gate-all-around (GAA) devices with Si-passivation are demonstrated on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers. While single horizontal Ge nanowire (NW) devices are demonstrated, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a5c24f4c48574ba63b78514d0463119
https://doi.org/10.1109/ted.2017.2756671
https://doi.org/10.1109/ted.2017.2756671
Publikováno v:
Solid State Phenomena. 255:245-250
Sub-10 nm technology node manufacturing processes may require the use of thicker and denser TiN hard mask for patterning at the BEOL. The modified TiN, which tends to be more chemically robust, must be removed using a wet etch process, while maintain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41fdfdab31317833050c7abe67535f48
https://doi.org/10.4028/www.scientific.net/ssp.255.245
https://doi.org/10.4028/www.scientific.net/ssp.255.245
Publikováno v:
Solid State Phenomena. 255:91-96
This paper describes etching of titanium nitride (TiN) highly selective to tungsten (W), where the TiN etch rate (E/R) was about 100 Å/min and W E/R was less than 1 Å/min at 60°C. The formulation concept was adapted from the Entegris TK-10 serie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0474caca69c41a66a35708ebf150cf9
https://doi.org/10.4028/www.scientific.net/ssp.255.91
https://doi.org/10.4028/www.scientific.net/ssp.255.91