Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Elyse Norton"'
Publikováno v:
Journal of Electronic Materials. 46:5873-5876
The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1−x Cd x Te/Si wafer is investigated. It is determined that the Hg1−x Cd x Te etch
Autor:
Scott M. Johnson, Jeffrey M. Peterson, K. Rybnicek, K. R. Olsson, J. W. Bangs, D. D. Lofgreen, M. F. Vilela, David R. Rhiger, Elyse Norton, C. W. Fulk
Publikováno v:
Journal of Electronic Materials. 42:3231-3238
Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive cadmium zinc telluride (CdZnTe) substrates. In t
Autor:
Jeffrey M. Peterson, K. A. Garvine, R. Olshove, L. A. Paden, J. W. Bangs, Elyse Norton, M. Reddy, R. M. Emerson, D. A. Garnett, Edward P. Smith
Publikováno v:
Journal of Electronic Materials. 39:1007-1014
Six-inch HgCdTe-on-silicon wafer capability is important due to the increase in die size along with the reduction in pixel pitch. Successful manufacturing of 6-inch HgCdTe on silicon depends upon the availability of low-defect-density substrates, rob
Autor:
E. A. Patten, J. E. Jensen, K. Kosai, L. T. Pham, Gregory K. Pierce, W. A. Radford, P. M. Goetz, Brett Z. Nosho, L. M. Giegerich, Edward P. Smith, Valerie Randall, R. A. Coussa, Elyse Norton, Stefan T. Baur, R. E. Longshore, Scott M. Johnson, John Edwards, G. M. Venzor, T. J. de Lyon, A. M. Gallagher, M. D. Newton, John A. Roth
Publikováno v:
Journal of Electronic Materials. 33:509-516
Raytheon Vision Systems (RVS, Goleta, CA) in collaboration with HRL Laboratories (Malibu, CA) is contributing to the maturation and manufacturing readiness of third-generation, dual-color, HgCdTe infrared staring focal plane arrays (FPAs). This paper
Autor:
Scott M. Johnson, J. E. Jensen, V. B. Harper, Edward P. Smith, A. A. Buell, G. M. Venzor, T. De Leon, R. A. Coussa, John A. Roth, M. D. Newton, L. T. Pham, J. B. Varesi, Elyse Norton
Publikováno v:
Journal of Electronic Materials. 33:662-666
The flexible nature of molecular-beam epitaxy (MBE) growth is beneficial for HgCdTe infrared-detector design and allows for tailored growths at lower costs and larger focal-plane array (FPA) formats. Control of growth dynamics gives the MBE process a
Autor:
Neil R. Malone, M. Reddy, Elyse Norton, Lynn Mears, John L. Vampola, Alan Levy, K. Rybnicek, Rich Wyles, James F. Asbrock, J. W. Bangs, Decosta Lindsay, Frank B. Jaworski
Publikováno v:
SPIE Proceedings.
Large format detector arrays are responsive uniformly over spectral 1-5μm wavelength range and are available with RVS' high quality HgCdTe detector epitaxial layers on large area 15 cm diameter wafers. Large wafers enable both low cost High Definiti
Autor:
Stefan T. Baur, Leon Melkonian, M. Reddy, Lee A. Elizondo, Mark Langell, J. W. Bangs, Elyse Norton, Scott M. Johnson, Frank B. Jaworski, James F. Asbrock, K. Rybnicek
Publikováno v:
SPIE Proceedings.
High-performance large-format detector arrays responsive to the 1-5μm wavelength range of the infrared spectrum fabricated using large area HgCdTe layers grown on 6-inch diameter (211) silicon substrates are available for advanced imaging applicatio
Autor:
E. A. Patten, Elyse Norton, Valerie Randall, Scott M. Johnson, John A. Roth, Ken Kosai, M. D. Newton, L. T. Pham, John E. Jensen, W. A. Radford, Paul Goetz, Gregory K. Pierce, Stefan T. Baur, Randolph E. Longshore, Edward P. Smith, Brett Z. Nosho, Raymond A. Coussa, John Edwards, G. M. Venzor
Publikováno v:
SPIE Proceedings.
Raytheon Vision Systems (RVS) in collaboration with HRL Laboratories is contributing to the maturation and manufacturing readiness of third-generation two-color HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from th
Autor:
Hong, Fangfang1 (AUTHOR) fh862@nyu.edu, Badde, Stephanie2 (AUTHOR), Landy, Michael S.1,3 (AUTHOR)
Publikováno v:
PLoS Computational Biology. 11/15/2021, Vol. 17 Issue 11, p1-37. 37p. 3 Diagrams, 1 Chart, 7 Graphs.
Publikováno v:
Journal of Electronic Materials; Oct2017, Vol. 46 Issue 10, p5873-5876, 4p, 3 Diagrams, 1 Graph