Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Elyes Garoudja"'
Autor:
Fouaz Lekoui, Rachid Amrani, Salim Hassani, Elyes Garoudja, Walid Filali, Slimane Oussalah, Driss Dergham, Hocine Akkari, Nouredine Sengouga
Publikováno v:
Zeitschrift für Naturforschung A.
Nanostructured thin films are one of the most valuable types of industrial semiconductors for a variety of optoelectronics and optical device applications, having recently been used as a transparent conductive oxide in solar cells. In this work, nano
Autor:
Fouaz Lekoui, Salim Hassani, Driss Dergham, Elyes Garoudja, Walid Filali, Rachid Amrani, Slimane Oussalah
Publikováno v:
2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS).
Autor:
Rachid Amrani, Elyes Garoudja, Fouaz Lekoui, Walid Filali, Hamid Neggaz, Yacine Adlane Djebeli, Laid Henni, Salim Hassani, Faouzi Kezzoula, Slimane Oussalah, Faisal Al mashary, Mohamed Henini
Publikováno v:
Bulletin of Materials Science. 46
Autor:
Fouaz Lekoui, Salim Hassani, Rachid Amrani, Laid Henni, Elyes Garoudja, Walid Filali, Mohammed Ouchabane, Driss Dergham, Slimane Oussalah
Publikováno v:
Brazilian Journal of Physics. 52
Autor:
Fouaz Lekoui, Walid Filali, Driss Dergham, M. Ouchabane, S. Hassani, Hocine Akkari, Elyes Garoudja
Publikováno v:
Brazilian Journal of Physics. 51:544-552
The annealing temperature effect on the structural, optical, electrical, and mechanical properties of different samples based on ZnO-Mg (MZO) thin films has been investigated. The studied samples were annealed at 300, 400, and 500 °C at atmospheric
Autor:
Walid Filali, Fouaz Lekoui, Boumediene Zatout, Laid Henni, Sidali Abdelmoumene, Elyes Garoudja, Rachid Amrani, Slimane Oussalah
Publikováno v:
2022 19th International Multi-Conference on Systems, Signals & Devices (SSD).
Autor:
Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini
The temperature effect on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has been investigated for various temperatures ranging from 260 to 400 K. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c9963f926ab0a5f268ad84d342c507b
Autor:
Mohamed Henini, Elyes Garoudja, Walid Filali, Fouaz Lekoui, Yvan Cuminal, Rachid Amrani, Slimane Oussalah, Pascale Abboud
An effective approach to determine thin film thickness ( d ) and optical constants ( n , k , α ) from transmittance spectrum with interference fringes is proposed. The developed strategy is based on applying the artificial bee colony (ABC) algorithm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05ca26a028028919a6436ad37b6ba4c7
Publikováno v:
Russian Microelectronics. 48:428-434
We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and opt
Publikováno v:
020 1st International Conference on Communications, Control Systems and Signal Processing (CCSSP).
This paper suggests an efficient approach to accurately model the irradiance dependency of photovoltaic (PV) modules by using the artificial neural network (ANN). In fact, a Feed-Forward Back Propagation (FFBP) neural network has been developed in th