Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Eltsafon Ashwal"'
Autor:
Katya Gordon, Hedvi Spielberg, Diana Shaphirov, Xiaolei Liu, Eltsafon Ashwal, Eitan Hajaj, Philippe Leray, Mark Ghinovker, Chen Dror, Raviv Yohanan, Zephyr Liu, Dieter Van den Heuvel, Roel Gronheid
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As design nodes of advanced semiconductor chips shrink, reduction in on-product overlay (OPO) budget becomes more critical to achieving higher yield. Imaging-based overlay (IBO) targets usually consist of periodic patterns where their pitches are res
Autor:
Mark Ghinovker, Katya Gordon, Eltsafon Ashwal, Eitan Hajaj, Isaac Salib, Raviv Yohanan, Xiaolei Liu, Chen Dror, Zephyr Liu, Diana Shaphirov
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In recent years, simulation-based analysis has become an integral phase in metrology targets design process, performances optimization wise to support on product overlay (OPO) reduction, accuracy and robustness to process variation. Moreover, a simul
Autor:
Chanha Park, Xiaolei Liu, Dongyoung Lee, Chen Dror, Eltsafon Ashwal, Dongsoo Kim, Sanghuck Jeon, Zephyr Liu, Katya Gordon, Honggoo Lee, Eitan Hajaj, Mark Ghinovker, Diana Shaphirov, Sang-Ho Lee, Dongsub Choi, Dohwa Lee, Raviv Yohanan
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Reduction in on product overlay (OPO) is a key component for high-end, high yield integrated circuit manufacturing. Due to the continually shrinking dimensions of the IC device elements it has become near-impossible to measure overlay on the device i
Autor:
Evgeni Gurevich, Yaron DeLeeuw, Dror Alumot, Mark Wagner, Yuval Lamhot, Ido Adam, Ze'ev Lindenfeld, Barak Bringoltz, Eltsafon Ashwal, James Manka, Dana Klein, Tom Leviant, Lilach Saltoun, Noga Sella, Yoel Feler, Xindong Gao, Tal Marciano, Bryan Chen, Tal Yaziv
Publikováno v:
SPIE Proceedings.
In this paper we discuss the mechanism by which process variations determine the overlay accuracy of optical metrology. We start by focusing on scatterometry, and showing that the underlying physics of this mechanism involves interference effects bet