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pro vyhledávání: '"Elson, T. W."'
Autor:
Chapler, B. C., Mack, S., Ju, L., Elson, T. W., Boudouris, B. W., Namdas, E., Yuen, J. D., Heeger, A. J., Samarth, N., Di Ventra, M., Segalman, R. A., Awschalom, D. D., Wang, F., Basov, D. N.
We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric fie
Externí odkaz:
http://arxiv.org/abs/1207.0895
