Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Els Van Besien"'
Autor:
Bart Vereecke, Els Van Besien, Deniz Sabuncuoglu Tezcan, Nick Spooren, Nicolaas Tack, Andy Lambrechts
Publikováno v:
Proceedings, Vol 2, Iss 13, p 751 (2019)
Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR v
Externí odkaz:
https://doaj.org/article/c3b610b49e6d4bada1bf7c3ac2b2f39d
Autor:
Geert Mannaert, Lars-Ake Ragnarsson, Els Van Besien, A. Dangol, Adrian Chasin, Diana Tsvetanova, Soon Aik Chew, S. Kubicek, Romain Ritzenthaler, Harold Dekkers, Andriy Hikavyy, Dan Mocuta, Hans Mertens, Naoto Horiguchi, Yoshiaki Kikuchi, Tom Schram, Erik Rosseel, An De Keersgieter, Zheng Tao, Kathy Barla, Katia Devriendt, Eddy Kunnen, Toby Hopf, Min-Soo Kim, Kurt Wostyn, Steven Demuynck
Publikováno v:
ECS Transactions. 77:19-30
Gate-all-around (GAA) transistors based on vertically stacked horizontal nanowires are promising candidates to replace FinFETs in future CMOS technology nodes. First of all, GAA devices provide optimal electrostatic control over semiconducting nanowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3df56b170bbc0db760b5a7d93692a017
https://doi.org/10.1149/07705.0019ecst
https://doi.org/10.1149/07705.0019ecst
Autor:
Eric Beyne, Gerald Beyer, Yunlong Li, Michele Stucchi, C. Wu, Els Van Besien, Xiaoping Shi, Ingrid De Wolf, Kristof Croes, Stefaan Van Huylenbroeck
Publikováno v:
Microelectronics Reliability. 54:1949-1952
The reliability results for barrier/liner systems in different high aspect ratio (5 × 50 μm) through silicon vias (TSV) are presented. Quite a few factors can influence the TSV barrier/liner reliability performance, including the TSV trench etch pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073abd527fda4933c4a402df86dfde82
https://doi.org/10.1016/j.microrel.2014.07.077
https://doi.org/10.1016/j.microrel.2014.07.077
Autor:
Sven Van Elshocht, Jürgen Bömmels, Zsolt Tőkei, Els Van Besien, Johan Swerts, Yohan Barbarin, Yong-Kong Siew, Karl Opsomer
Publikováno v:
Microelectronic Engineering. 120:235-239
A tri-layered in situ grown RuTiN barrier system for advanced interconnects was developed using plasma-enhanced atomic layer deposition (PE-ALD) from tetrakis(dimethylamino)titanium, (pyrrolyl-methylcyclopentadienyl)ruthenium and N2/H2 plasma. The sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce4cd03dca163f0dff4cb73bcc7b192e
https://doi.org/10.1016/j.mee.2013.08.008
https://doi.org/10.1016/j.mee.2013.08.008
Autor:
Jean-Francois de Marneffe, Patrick Verdonck, Yohan Barbarin, Mikhail R. Baklanov, Sven Van Elshocht, Harold Dekkers, Kris Vanstreels, Els Van Besien, Arjun Singh
Publikováno v:
Microelectronic Engineering. 120:221-224
Scaling of the copper interconnect structures requires dielectric barrier materials with a gradually lower dielectric constant that still have adequate copper and moisture barrier properties. In this work, we study the PE-CVD deposition of a-SiCO:H f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bbd38405d8df9f7da76ecf9fa888db8
https://doi.org/10.1016/j.mee.2013.12.022
https://doi.org/10.1016/j.mee.2013.12.022
Autor:
Mikhail R. Baklanov, Alec Goodyear, Nicholas Braithwaite, Abdelkarim Ferchichi, Vladimir Samara, Patrick Verdonck, Els Van Besien
Publikováno v:
Thin Solid Films. 520:464-468
In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fda5d986b0ef1b60ca7d1a0e5fb514
https://doi.org/10.1016/j.tsf.2011.06.046
https://doi.org/10.1016/j.tsf.2011.06.046
Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers
Autor:
Thomas Kauerauf, Christopher J. Wilson, Melina Lofrano, Larry Zhao, Robin Degraeve, Cor Claeys, Els Van Besien, Gerald Beyer, Kristof Croes, Zsolt Tőkei
Publikováno v:
Thin Solid Films. 520:662-666
Study of the intrinsic time dependent dielectric breakdown (TDDB) of dielectric copper diffusion barriers was realized using a unique planar capacitor (Pcap) test structure. The test vehicle has several advantages over the metal dot method. The most
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::813249e9528cd82e2c8f849c0c5fc500
https://doi.org/10.1016/j.tsf.2011.08.073
https://doi.org/10.1016/j.tsf.2011.08.073
Autor:
L. Farrell, Shabnam Mardani, Patrick Verdonck, Els Van Besien, Mikhail R. Baklanov, Ivan Ciofi, Gianpaolo Borrello, Kris Vanstreels
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:8363-8367
Nanoporous low-kappa films were manufactured by using a 3-step process: co-deposition of a skeleton and porogens by PECVD, porogen removal by remote plasma and UV cure. In this study, the influence of both the variation of the porogen load and the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bbd1313775a92f181acee101dcc3018
https://doi.org/10.1166/jnn.2011.5033
https://doi.org/10.1166/jnn.2011.5033
Autor:
Gerald Beyer, Cor Claeys, Larry Zhao, Christopher J. Wilson, Henny Volders, Mikhail R. Baklanov, Marianna Pantouvaki, Zsolt Tőkei, Els Van Besien
Publikováno v:
Microelectronic Engineering. 88:3030-3034
A unique test structure based on a metal–insulator–semiconductor planar capacitor (Pcap) design was used to investigate several aspects of metal barrier-induced low-k damage. A special term called Effective Damage Thickness was introduced to desc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c8ef81c3a3fc0b4fb66848b669ec61
https://doi.org/10.1016/j.mee.2011.05.002
https://doi.org/10.1016/j.mee.2011.05.002