Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Eloy Ramirez-Garcia"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 658-664 (2023)
A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance param
Externí odkaz:
https://doaj.org/article/2f0c6d8b4850468196665a248eb149e0
Autor:
Itza Esther Villavicencio-Avila, Anibal Pacheco-Sanchez, Luis M. Rodriguez-Mendez, Eloy Ramirez-Garcia
This article presents the design of high-frequencydown-conversion mixers using a carbon nanotube fieldeffecttransistor (CNTFET). An experimentally-calibrated semiphysicalcompact model for high-frequency CNTFET technologieshas been used. The designed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fdfa0e4b72c9cdb715ecee31f25df0f
https://doi.org/10.21203/rs.3.rs-2351191/v1
https://doi.org/10.21203/rs.3.rs-2351191/v1
Autor:
Anibal Pacheco-Sanchez, J. Noe Ramos-Silva, Nikolaos Mavredakis, Eloy Ramirez-Garcia, David Jimenez
Publikováno v:
2022 37th Conference on Design of Circuits and Integrated Circuits (DCIS).
Publikováno v:
2022 IEEE Latin American Electron Devices Conference (LAEDC).
Autor:
Luis M. Diaz-Albarran, Anibal Pacheco-Sanchez, Luis M. Rodriguez-Mendez, Eloy Ramirez-Garcia, M. Enciso-Aguilar, Javier N. Ramos-Silva, Michael Schroter
Publikováno v:
IEEE Transactions on Nanotechnology. 19:284-291
This article details the design of single- and double-stage maximum gain and low-noise high-frequency amplifiers at 2.4 GHz using a compact carbon nanotube field-effect transistor model, which is initially calibrated with hysteresis-free experimental
Autor:
Frédéric Aniel, Eloy Ramirez-Garcia, Nicolas Zerounian, L.M. Diaz-Albarran, E. Garduño-Nolasco, Donato Valdez-Pérez, M. Enciso-Aguilar, Martha Galaz-Larios, Luis M. Rodriguez-Mendez
Publikováno v:
Solid-State Electronics. 153:1-7
We present a reliable technique to model the influence of DC current-crowding in bipolar transistors on the variation of emitter width (WE,ef) as a function of collector current density (JC) in silicon-germanium-carbon heterojunction bipolar transist
Publikováno v:
2020 IEEE MTT-S Latin America Microwave Conference (LAMC 2020).
Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is prov
Autor:
Deji Akinwande, David Jiménez, Saungeun Park, Leslie M. Valdez, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia
Publikováno v:
IEEE Microwave and Wireless Components Letters
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::268ee16a695366407d917e18d4ad398f
Publikováno v:
IEEE Microwave and Wireless Components Letters
A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed considering the explicit contribution of effects at the metal–graphene interfaces by means of contact resistances. A methodology to separate the contact res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::796c5189d64ad03af57b0f9f49fa7ae1
Autor:
Eloy Ramirez-Garcia, Brandon A. Alcantara-Gavilan, M. Enciso-Aguilar, Luis M. Rodriguez-Mendez, Javier N. Ramos-Silva
Publikováno v:
2019 IEEE International Fall Meeting on Communications and Computing (ROC&C).
This paper describes the design and characterization of an ultra-wideband (UWB) flexible antenna for personal mobile communications. This antenna was fabricated on a polyamide substrate and its surface is equal to 40 × 55mm2. Modelling results were