Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Eloy Ramírez-García"'
A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5385ce2c8b49b0a569310504ccb14e4f
Autor:
Hidelberto Macedo-Zamudio, Aníbal Pacheco-Sánchez, Luis Manuel Rodríguez-Méndez, Eloy Ramírez-García, Donato Valdez-Pérez
Publikováno v:
Instituto Politécnico Nacional
IPN
Redalyc-IPN
Científica (México) Num.2 Vol.23
IPN
Redalyc-IPN
Científica (México) Num.2 Vol.23
"Este trabajo se analiza el rendimiento estático y dinámico de dos enfoques diferentes de dopaje, químico y electrostático, en diodos Schottky de nanotubos de carbono (CNT) con contactos de geometría bidimensional, por medio de simulación numé
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::0606f49f93ac05e5d312311086a1386d
https://www.redalyc.org/articulo.oa?id=61459623001
https://www.redalyc.org/articulo.oa?id=61459623001
Publikováno v:
Instituto Politécnico Nacional
IPN
Redalyc-IPN
Científica (México) Num.2 Vol.19
IPN
Redalyc-IPN
Científica (México) Num.2 Vol.19
"This paper introduces the results of the extraction of the extrinsic base resistance reported ( R Bx ) of a silicon germanium carbon (SiGe:C) heterojunction bipolar transistor (HBT) at room (300 K) and low temperature (40 K). The technique is based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::7834744fab8a6698cbdb856ae9e28bdb
https://www.redalyc.org/articulo.oa?id=61448039005
https://www.redalyc.org/articulo.oa?id=61448039005