Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Elodie Sungauer"'
Autor:
Ujwol Palanchoke, Gaby Bélot, Sébastien Bérard-Bergery, Juline Saugnier, Elodie Sungauer, Charlotte Beylier, Florian Tomaso, Marie-line Pourteau, Ivanie Mendes, Rémi Coquand, Arthur Bernadac
Publikováno v:
Novel Patterning Technologies 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c6c9f32f097d0c3ef841c553a145b8
https://doi.org/10.1117/12.2657600
https://doi.org/10.1117/12.2657600
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a2f8b1d40124ac7d72b0c64cb78254
https://doi.org/10.1117/12.2657676
https://doi.org/10.1117/12.2657676
Publikováno v:
37th European Mask and Lithography Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44c598b9b70c84b3e03d1047cfc093f1
https://doi.org/10.1117/12.2639563
https://doi.org/10.1117/12.2639563
Autor:
Marios Barlas, Axel Crocherie, Felix Bardonnet, Quentin Abadie, Elodie Sungauer, Matteo Vignetti, Bastien Mamdy, Isobel Nicholson, Patrick Gros d'Aillon, Raul-Andres Bianchi, Gabriel Mugny, Dominique Golanski, Florian Domengie, Pascal Besson, Emilie Prevost, Linda Parmigiani, Jihane Arnaud, Helene Wehbe-Alause, Arnaud Tournier, Olivier Noblanc, Krysten Rochereau
Publikováno v:
Integrated Optics: Devices, Materials, and Technologies XXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e648b22f5db2c3e6f429e7f1b0cce62
https://doi.org/10.1117/12.2609360
https://doi.org/10.1117/12.2609360
Autor:
Charles Valade, Elodie Sungauer, Jérôme Hazart, Sébastien Bérard-Bergery, Maxime Besacier, C. Gourgon
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
In the microelectronics industry, most of the dimensional metrology relies on critical dimension (CD) estimation. These measurements are mainly performed by critical dimension scanning electron microscopy, because it is a very fast, mainly nondestruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2c308ae57d845aba70448c82a3711ba
https://hal.univ-grenoble-alpes.fr/hal-02324657
https://hal.univ-grenoble-alpes.fr/hal-02324657
Autor:
Chevolleau, T., Camille Petit-Etienne, Gilles Cunge, Erwine Pargon, Vallier, L., Posseme, N., Olivier Joubert, Anne Le Gouil, Raphael Ramos, Elodie Sungauer, Olivier Luere, Maxime Darnon, Romain Chanson, Salma Younesy
Publikováno v:
ENRIS 2019 (European Nanofabrication Research Infrastructure Symposium)
ENRIS 2019 (European Nanofabrication Research Infrastructure Symposium), 2019, UNIVERSITY OF TWENTE, Netherlands
HAL
ENRIS 2019 (European Nanofabrication Research Infrastructure Symposium), 2019, UNIVERSITY OF TWENTE, Netherlands
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::65b8d9154855fc67f1a4dfe6121db37b
https://hal.univ-grenoble-alpes.fr/hal-02624143
https://hal.univ-grenoble-alpes.fr/hal-02624143
Autor:
Lei Wang, L. Depre, Mu Feng, Jean-Christophe Michel, Frederic Robert, Elodie Sungauer, Sanjay Kapasi, Song Lan, Jean-Christophe Le-Denmat, Emek Yesilada
Publikováno v:
SPIE Proceedings.
From 28nm technology node and below, Optical Proximity Correction (OPC) needs to take into account light scattering effects from prior layers when bottom anti-reflective coating (BARC) is not used, which is typical for implant layers. In this paper,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d434bfd7df3d58a11dd5244740ec2235
https://doi.org/10.1117/12.2047115
https://doi.org/10.1117/12.2047115
Autor:
Thuy Do, J-C. Le Denmat, John L. Sturtevant, Jorge Entradas, Elodie Sungauer, Emek Yesilada, J-C. Michel, Yuri Granik, Frederic Robert, A-M. Armeanu
Publikováno v:
SPIE Proceedings.
Ionic implantation photolithography step considered to be non critical started to be influenced by unwanted overexposure by wafer topography with technology node downscaling evolution [1], [2]. Starting from 2xnm technology nodes, implant patterns mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ec1e1e38104c79bbb2bf2893918942
https://doi.org/10.1117/12.2027291
https://doi.org/10.1117/12.2027291
Autor:
Emek Yesilada, Thuy Do, Jean-Christophe Michel, Frederic Robert, John L. Sturtevant, Jean-Christophe Le Denmat, Jorge Entradas, Yuri Granik, Elodie Sungauer, Ana-Maria Armeanu
Publikováno v:
SPIE Proceedings.
Reflection by wafer topography and underlying layers during optical lithography can cause unwanted exposure in the resist [1]. This wafer stack effect phenomenon which is neglected for larger nodes than 45nm, is becoming problematic for 32nm technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09a96fd0bc8d1214a2601f9e2acd5ff
https://doi.org/10.1117/12.2011412
https://doi.org/10.1117/12.2011412
Autor:
Jean-Christophe Le-Denmat, Catherine Martinelli, Elodie Sungauer, Jean-Christophe Michel, Emek Yesilada, Frederic Robert
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0146036b459f167f0e04bf2d30d00549
https://doi.org/10.1117/12.2011424
https://doi.org/10.1117/12.2011424