Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Elodie Ebrard"'
Autor:
Ruchil Jain, Felix Holzmueller, Peter Baars, Alban Zaka, Elodie Ebrard, Ketankumar Tailor, Tom Herrmann, Damien Angot
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae6e905ed20f151dfc98f0724948e5b
https://doi.org/10.1109/ispsd49238.2022.9813636
https://doi.org/10.1109/ispsd49238.2022.9813636
Publikováno v:
Microelectronics Journal. 40:1755-1765
Specific applications require large amounts of high-performance, dense and low-cost non-volatile memories with CMOS standard process compatibility. There exists numerous structures for one-time-programming (OTP) bitcells, exploiting various physical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475008a2f6117f602829b87391646bbb
https://doi.org/10.1016/j.mejo.2009.09.007
https://doi.org/10.1016/j.mejo.2009.09.007
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference.
The proposed antifuse bitcell comprises a antifuse capacitor accessed through a thin-oxide cascode structure and is fully standard CMOS process compatible. The area of a reliable cell is in the range of 1µm2 in 45nm core CMOS process. With respect t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6626e70de84042a499e364174d3f9724
https://doi.org/10.1109/essderc.2009.5331487
https://doi.org/10.1109/essderc.2009.5331487