Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Elmira Shahrabi"'
Publikováno v:
Microelectronic Engineering. 214:74-80
The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebf1cf90c26bda25fbe24a475f1fa705
https://doi.org/10.1016/j.mee.2019.04.018
https://doi.org/10.1016/j.mee.2019.04.018
Autor:
Yusuf Leblebici, Carlo Ricciardi, Jury Sandrini, Elmira Shahrabi, Oguz Tolga Celik, Cecilia Giovinazzo
Publikováno v:
ACS Applied Electronic Materials. 1:900-909
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31e0a24ab4c9a3edba0978ce8af19eff
https://doi.org/10.1021/acsaelm.9b00094
https://doi.org/10.1021/acsaelm.9b00094
Publikováno v:
Frontiers in Nanotechnology. 2
Resistive switching (RS) devices, also referred to as Resistive Random Access Memories (ReRAMs), rely on a working principle based on the change of electrical resistance following proper external electrical stimuli. Since the demonstration of the fir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a992430e3c43655ea072a56a0aab48bc
https://doi.org/10.3389/fnano.2020.592684
https://doi.org/10.3389/fnano.2020.592684
Autor:
Yusuf Leblebici, Igor Krawczuk, Carlo Ricciardi, Evangelos Eleftheriou, Iason Giannopoulos, Christophe Piveteau, Abu Sebastian, Elmira Shahrabi, Manuel Le Gallo, Cecilia Giovinazzo, Irem Boybat
Publikováno v:
ISCAS
Metal-oxide-based resistive memory devices (ReRAM) are being actively researched as synaptic elements of neuromorphic co-processors for training deep neural networks (DNNs). However, device-level non-idealities are posing significant challenges. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dec7f6973710c7087507dda378e2d949
https://doi.org/10.1109/iscas.2019.8702714
https://doi.org/10.1109/iscas.2019.8702714
Autor:
Thomas LaGrange, Yusuf Leblebici, Elmira Shahrabi, Carlo Ricciardi, Mahmoud Hadad, Cecilia Giovinazzo, Miguel Ramos
Tungsten (W) is one of the most promising materials to be used in resistive random-access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e4b0494fd4cfe78f4f3cfd5d71474b3
http://hdl.handle.net/11583/2809079
http://hdl.handle.net/11583/2809079
Autor:
Duncan T. L. Alexander, Juergen Brugger, Olivier J. F. Martin, Valentin Flauraud, Massimo Mastrangeli, Gabriel D. Bernasconi, Elmira Shahrabi, Jérémy Butet
Publikováno v:
Nature Nanotechnology. 12:73-80
Predetermined and selective placement of nanoparticles onto large-area substrates with nanometre-scale precision is essential to harness the unique properties of nanoparticle assemblies, in particular for functional optical and electro-optical nanode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19188904ea37e9e8d448f5b324cb986a
https://doi.org/10.1038/nnano.2016.179
https://doi.org/10.1038/nnano.2016.179
Publikováno v:
PRIME
In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO 2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al 2 O 3 layer as a barrier layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d56fde867f030d7664b9c50c68c47a
https://doi.org/10.1109/prime.2018.8430371
https://doi.org/10.1109/prime.2018.8430371
Publikováno v:
2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE).
In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfO x /TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d202b904fab6fcc64544947292b7ad
https://doi.org/10.1109/icsee.2016.7806101
https://doi.org/10.1109/icsee.2016.7806101
Publikováno v:
2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).
In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba057ccfb19de3dd292386cc4a9b92a2
https://doi.org/10.1109/prime.2016.7519515
https://doi.org/10.1109/prime.2016.7519515