Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Elliott Franke"'
Autor:
Hsinyu Tsai, Chi-Chun Liu, Kafai Lai, Chen Zhang, Daniel Corliss, Richard A. Farrell, Nelson Felix, Chun Wing Yeung, Ruilong Xie, Yann Mignot, Elliott Franke, Cheng Chi, Jingyun Zhang
Publikováno v:
Nature Electronics. 1:562-569
The drive to deliver increasingly powerful and feature-rich integrated circuits has made technology node scaling—the process of reducing transistor dimensions and increasing their density in microchips—a key challenge in the microelectronics indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e90f2b048d34bd000337fd9b46de1ae
https://doi.org/10.1038/s41928-018-0147-4
https://doi.org/10.1038/s41928-018-0147-4
Autor:
ELLIOTT, FRANKE P.
Publikováno v:
McKnight's Senior Living; Jul/Aug2024, Vol. 22 Issue 4, p9A-9A, 1p
Autor:
Gert J. Leusink, Angelique Raley, Richard A. Farrell, Akitero Ko, David L. O'Meara, K. Tapily, David Hetzer, Peter Biolsi, Elliott Franke, Anton J. deVilliers, Cory Wajda, Jodi Hotalen
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Multi-patterning processes such as self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) present new challenges to the semiconductor device manufacturing such as increased relative cost to previous nodes, longer cycle tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc65e7a4a9c378c4ae5c488c578eb148
https://doi.org/10.1117/12.2303004
https://doi.org/10.1117/12.2303004
Autor:
Elliott Franke, Akiteru Ko, Peter Biolsi, Eric Liu, David L. O'Meara, Karthik Pillai, Nihar Mohanty
Publikováno v:
SPIE Proceedings.
Dimension shrinkage has been a major driving force in the development of integrated circuit processing over a number of decades. The Self-Aligned Quadruple Patterning (SAQP) technique is widely adapted for sub-10nm node in order to achieve the desire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ffc60979ac9ffb8abc74f328d9bfff0
https://doi.org/10.1117/12.2258097
https://doi.org/10.1117/12.2258097
Autor:
Angelique Raley, Akiteru Ko, Sophie Thibaut, Cheryl Pereira, Subhadeep Kal, Nihar Mohanty, Aelan Mosden, Karthik Pillai, Richard A. Farrell, Peter Biolsi, Elliott Franke
Publikováno v:
Advanced Etch Technology for Nanopatterning VI.
Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e193ef6db497cdfbbd237af9d6b038b
https://doi.org/10.1117/12.2257507
https://doi.org/10.1117/12.2257507
Autor:
Robert L. Bruce, Stuart A. Sieg, Mark Somervell, Daniel P. Sanders, Richard A. Farrell, Hoa Truong, Kafai Lai, Akiteru Ko, Chi-Chun Liu, Andrew Metz, Matthew E. Colburn, Kristin Schmidt, Nelson Felix, Elliott Franke, Daniel Corliss, John C. Arnold, Tsuyoshi Furukawa, Indira Seshadri, Hsinyu Tsai, Yann Mignot, Ekmini Anuja De Silva, Lovejeet Singh, David Hetzer, Luciana Meli, Doni Parnell, Martha I. Sanchez, Scott LeFevre, Cheng Chi
Publikováno v:
SPIE Proceedings.
The progress of three potential DSA applications, i.e. fin formation, via shrink, and pillars, were reviewed in this paper. For fin application, in addition to pattern quality, other important considerations such as customization and design flexibili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::621ee7f5d3e718c914e8decb0858a3ef
https://doi.org/10.1117/12.2260479
https://doi.org/10.1117/12.2260479
Autor:
Richard A. Farrell, Fee Li Lie, Michael A. Guillorn, Hoa Truong, Elliott Franke, Sean D. Burns, Matthew E. Colburn, Akiteru Ko, Mark Somervell, Nelson Felix, John C. Arnold, David Hetzer, Hsinyu Tsai, Stuart A. Sieg, Kafai Lai, Chi-Chun Liu, Daniel P. Sanders
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f7f1588d44e7df8463769208c909dc
https://doi.org/10.1117/2.1201606.006519
https://doi.org/10.1117/2.1201606.006519
Autor:
Genevieve Beique, Lei Sun, Jeffrey S. Smith, Wenhui Wang, Richard A. Farrell, C. Labelle, Peter Biolsi, Kal Subhadeep, Cheryl Periera, Elliott Franke, Erik Verdujn, Ryoung-han Kim, Erik R. Hosler, Nihar Mohanty, Akiteru Ko, Anton J. deVilliers
Publikováno v:
SPIE Proceedings.
Critical back end of line (BEOL) Mx patterning at 7nm technology node and beyond requires sub-36nm pitch line/space pattern in order to meet the scaling requirements. This small pitch can be achieved by either extreme ultraviolet (EUV) lithography or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e07c4b879800bf2f04725b9bd26243a8
https://doi.org/10.1117/12.2219259
https://doi.org/10.1117/12.2219259
Autor:
Richard A. Farrell, Michael A. Guillorn, Sean D. Burns, Kafai Lai, Fee Li Lie, Hsinyu Tsai, Elliott Franke, Stuart A. Sieg, Matthew E. Colburn, Nelson Felix, John C. Arnold, Daniel P. Sanders, David Hetzer, Hoa Truong, Chi-Chun Charlie Liu, Akiteru Ko, Mark Somervell
Publikováno v:
SPIE Proceedings.
Several 27nm-pitch directed self-assembly (DSA) processes targeting fin formation for FinFET device fabrication are studied in a 300mm pilot line environment, including chemoepitaxy for a conventional Fin arrays, graphoepitaxy for a customization app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0994496273b2831133bf7a7a6a0cd1
https://doi.org/10.1117/12.2219670
https://doi.org/10.1117/12.2219670
Autor:
Wooyong Cho, Chi-Chun Liu, Mark Somervell, Fee Li Lie, Akiteru Ko, Melih Ozlem, Michael A. Guillorn, Nihar Mohanty, Jay W. Strane, David Hetzer, Sean D. Burns, Hsinyu Tsai, Elliott Franke, Vinayak Rastogi, Sung Gon Jung, Richard A. Farrell, Matthew E. Colburn, Nelson Felix, Kafai Lai
Publikováno v:
Alternative Lithographic Technologies VII.
A 27nm-pitch Graphoepitaxy directed self-assembly (DSA) process targeting fin formation for FinFET device fabrication is studied in a 300mm pilot line environment. The re-designed guiding pattern of graphoepitaxy DSA process determines not only the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd04822410c6838f735124f5e8fa66de
https://doi.org/10.1117/12.2086053
https://doi.org/10.1117/12.2086053