Zobrazeno 1 - 10
of 229
pro vyhledávání: '"Elliman, Robert"'
Autor:
Wang, Xiao-Yuan, Zhou, Jia-Wei, Dong, Chuan-Tao, Chen, Xin-Hui, Nandi, Sanjoy Kumar, Elliman, Robert G., Kang, Sung-Mo, Iu, Herbert Ho-Ching
The design of balanced ternary digital logic circuits based on memristors and conventional CMOS devices is proposed. First, balanced ternary minimum gate TMIN, maximum gate TMAX and ternary inverters are systematically designed and verified by simula
Externí odkaz:
http://arxiv.org/abs/2309.01615
Autor:
Drouhin, Marie, Li, Shuai, Grelier, Matthieu, Collin, Sophie, Godel, Florian, Elliman, Robert G., Dlubak, Bruno, Trastoy, Juan, Querlioz, Damien, Grollier, Julie
Hardware spiking neural networks hold the promise of realizing artificial intelligence with high energy efficiency. In this context, solid-state and scalable memristors can be used to mimic biological neuron characteristics. However, these devices sh
Externí odkaz:
http://arxiv.org/abs/2209.00413
Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they exhibit a
Externí odkaz:
http://arxiv.org/abs/2009.00810
Akademický článek
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Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negat
Externí odkaz:
http://arxiv.org/abs/1912.08373
Autor:
Nath, Shimul Kanti, Nandi, Sanjoy Kumar, El-Helou, Assaad, Liu, Xinjun, Li, Shuai, Ratcliff, Thomas, Raad, Peter E, Elliman, Robert G
Publikováno v:
Phys. Rev. Applied 13, 064024 (2020)
The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are observed under
Externí odkaz:
http://arxiv.org/abs/1912.08371
Autor:
Nandi, Sanjoy Kumar, Nath, Shimul Kanti, Helou, Assaad El, Li, Shuai, Uenuma, Mutsunori, Raad, Peter E, Elliman, Robert G
Publikováno v:
ACS Applied Materials & Interfaces (2020)
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution of conduct
Externí odkaz:
http://arxiv.org/abs/1909.06443
Autor:
Nandi, Sanjoy Kumar, Nath, Shimul Kanti, Helou, Assaad El, Li, Shuai, Liu, Xinjun, Raad, Peter E., Elliman, Robert G.
Publikováno v:
Advanced Functional Materials (2019)
In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices is a direct consequence of current localization and redistribution. Curren
Externí odkaz:
http://arxiv.org/abs/1906.08980
Publikováno v:
Advanced Functional Materials 2019
Current-controlled negative differential resistance has significant potential as a fundamental building block in brain-inspired neuromorphic computing. However, achieving desired negative differential resistance characteristics, which is crucial for
Externí odkaz:
http://arxiv.org/abs/1907.02651
A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced and its application demonstrated. The technique is based on thermal discolouration of a thin photor
Externí odkaz:
http://arxiv.org/abs/1811.11889