Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Elksne, Maira"'
Publikováno v:
UK Semiconductors 2022
No abstract available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::cd4b73058d51e6ea8afc889d7e11f85f
https://eprints.gla.ac.uk/271903/1/271903.pdf
https://eprints.gla.ac.uk/271903/1/271903.pdf
Autor:
Ofiare, Afesomeh, Taking, Sanna, Elksne, Maira, Al-Khalidi, Abdullah, Ghosh, S., Kappers, M., Oliver, R.A., Wasige, Edward
Publikováno v:
UK Semiconductors 2022
No abstract available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::8c3d81da31c2fa917ab8847a6af8eff6
https://eprints.gla.ac.uk/271577/1/271577.pdf
https://eprints.gla.ac.uk/271577/1/271577.pdf
Autor:
Dhongde, Aniket, Taking, Sanna, Elksne, Maira, Ofiare, Afesomeh, Karami, Kaivan, Dwidar, Mahmud, Al-Khalidi, Abdullah, Wasige, Edward
Publikováno v:
45th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits
This paper reports on the processing and device characteristics of\ud AlGaN/GaN high electron mobility transistors using buffer-free\ud GaN grown on SiC substrate. This new concept of thin\ud AlGaN/GaN heterostructure (2-3μm). As-grown epitaxial str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e49b25839af2325b84a01370cfb6af28
https://eprints.gla.ac.uk/271905/1/271905.pdf
https://eprints.gla.ac.uk/271905/1/271905.pdf
Autor:
Karami, Kaivan, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira, Dhongde, Aniket, Al-Khalidi, Abdullah, Wasige, Edward
Publikováno v:
WOCSDICE EXMATEC 2022
In this work we report on the processing and device characteristics\ud of AlGaN/GaN metal-oxide/insulator-semiconductor high\ud electron mobility transistors (MOS-HEMTs) employing different\ud types of dielectric layers such as SiO2, Si3N4 and Al2O3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::43c833d857350bab889fc447ebf297f1
https://eprints.gla.ac.uk/270672/1/270672.pdf
https://eprints.gla.ac.uk/270672/1/270672.pdf
Publikováno v:
IEEE Transactions on Electron Devices. 66:2454-2458
This brief presents AlGaN/GaN high electron mobility transistor (HEMT) devices with improved thermal and dc current–voltage ( ${I}$ – ${V}$ ) performance using a novel method of obtaining a distributed channel device, i.e., the total semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6c5bff289f1b582000c7d82596cbc90
https://doi.org/10.1109/ted.2019.2907152
https://doi.org/10.1109/ted.2019.2907152
Autor:
Elksne, Maira
The ever increasing demand for high power levels at higher frequencies from the industry has stimulated extensive research in gallium nitride (GaN) transistor technology over the past two decades. This has led to significant advances of the technolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00842263fe9477cd9943e37c67769710
This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only 1.3 μA/mm at -20 V gate voltage for devices with gate periphery
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::0a6e0cfc72701a581bb4e38d0c11204d
https://eprints.gla.ac.uk/170403/1/170403.pdf
https://eprints.gla.ac.uk/170403/1/170403.pdf
Autor:
Elksne, Maira
Bakalaura darbā aprakstīti vērtējošo papildinājumu lietojuma zinātnisko grāmatu recenzijās pētījuma rezultāti, vadoties pēc Martina (2000) izstrādātās vērtēšanas teorijas. Darba teorētiskā daļa ir bastīta uz Martina un Vaita (2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2360::108cf4ed03f35fbf13410135467f0087
https://dspace.lu.lv/dspace/handle/7/22217
https://dspace.lu.lv/dspace/handle/7/22217
Publikováno v:
Optics express [Opt Express] 2023 May 22; Vol. 31 (11), pp. 18300-18317.