Zobrazeno 1 - 10
of 219
pro vyhledávání: '"Elke Wendler"'
Publikováno v:
Results in Optics, Vol 17, Iss , Pp 100750- (2024)
It has been shown that Sn implantation with subsequent annealing in air leads to an increase in the electroluminescence (EL) intensity of SiO2/Si structure by two orders of magnitude. Intense violet EL with a maximum at 3.21 eV was observed at room t
Externí odkaz:
https://doaj.org/article/09e0b3fda593438abb8da7f2f3ee92fc
Autor:
Shiva Choupanian, Wolfhard Möller, Martin Seyring, Claudia Pacholski, Elke Wendler, Andreas Undisz, Carsten Ronning
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Ion irradiation can cause burrowing of nanoparticles in substrates, strongly depending on the material properties and irradiation parameters. In this study, it is demonstrated that the sinking process can be accomplished with ion irradiation
Externí odkaz:
https://doaj.org/article/1190088dc6d3463087fd3d70a2c26f68
Publikováno v:
Crystals, Vol 9, Iss 6, p 290 (2019)
The transparent conducting oxides ZnO and ZnO:Al are interesting materials for a wide range of applications. Several of these applications need a large area, single crystalline, and specially doped thin layers. A common technique for the fabrication
Externí odkaz:
https://doaj.org/article/0c66edc53d6143699fdb40075481a0a8
Autor:
Johan B. Malherbe, Thulani Thokozani Hlatshwayo, O.S. Odutemowo, Elke Wendler, M.Y.A. Ismail, Z.A.Y. Abdalla, Vladimir A. Skuratov, E.G. Njoroge
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 489:11-19
The effect of high temperature annealing and swift heavy ion irradiation (SHI) on the migration behaviour of xenon (Xe) implanted into glassy carbon (GC) have been investigated. GC substrates were implanted with 200 keV Xe ions to a fluence of 1 × 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cbe6d4f7a293d486b99a8c4d88a655b
https://doi.org/10.1016/j.nimb.2020.12.012
https://doi.org/10.1016/j.nimb.2020.12.012
Autor:
M.Y.A. Ismail, Johan B. Malherbe, Z.A.Y. Abdalla, Thulani Thokozani Hlatshwayo, Elke Wendler, E.G. Njoroge
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 487:30-37
This study reviews the migration behaviour of selenium in polycrystalline SiC, which acts as the main diffusion barrier in the coated fuel particles for Very High Temperature Reactors. Se ions of 200 keV were implanted into polycrystalline SiC wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc0881e8094a022fe973ae4028a6db7
https://doi.org/10.1016/j.nimb.2020.08.022
https://doi.org/10.1016/j.nimb.2020.08.022
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 462:119-125
The formation of damage in neodymium doped calcium niobate gallium garnet was investigated after irradiation with 100 keV and 6 MeV C ions at room temperature. The damage was quantified by means of Rutherford backscattering spectrometry in channellin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5c9bd4233c10c9ceb6acefbc3bc208
https://doi.org/10.1016/j.nimb.2019.11.015
https://doi.org/10.1016/j.nimb.2019.11.015
Publikováno v:
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences. 477
Glassy carbon has properties making it attractive as a containment material for radioactive waste. In this study, the diffusivity of the radiological important fission product, strontium, is measured. Two hundred kiloelectronvolt strontium ions were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a18233252054f67afca55713f9c9ba
https://doi.org/10.1098/rspa.2020.0797
https://doi.org/10.1098/rspa.2020.0797
Autor:
Edda Rädlein, Elke Wendler, Carsten Ronning, B.S.M. Kretzschmar, Carmen Voigt, Bernd Grünler, A. Heft, R. Köcher
Publikováno v:
Surface and Coatings Technology. 375:256-265
Porous silicon oxide thin films were deposited by combustion chemical vapour deposition (CCVD). Depending on the process parameters applied, the layer thickness ranged from 18 to 165 nm, as obtained by profilometry and spectral ellipsometry (SE). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e17e2d47ee82f32a69672d3481345041
https://doi.org/10.1016/j.surfcoat.2019.07.020
https://doi.org/10.1016/j.surfcoat.2019.07.020
Autor:
Irina N. Parkhomenko, N. S. Nechaev, L. A. Vlasukova, A. F. Komarov, G. M. Zayats, Elke Wendler, G. D. Ivlev, S. A. Miskiewicz, F. F. Komarov
Publikováno v:
Acta Physica Polonica A. 136:254-259
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd7cc90d10b591b04c4e060928db87f
https://doi.org/10.12693/aphyspola.136.254
https://doi.org/10.12693/aphyspola.136.254
Publikováno v:
Journal of Materials Science. 54:6066-6072
The accumulation of irradiation-induced disorder in SrTiO3 single crystals irradiated at 16 K with 200 keV Ar ions has been investigated using Rutherford backscattering spectrometry along the 〈100〉 channeling direction and compared with previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c549603430388fa635e35c97648c32
https://doi.org/10.1007/s10853-018-03313-7
https://doi.org/10.1007/s10853-018-03313-7