Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Elke Erben"'
Autor:
Dina H. Triyoso, Elke Erben, Robert Binder, M. Weisheit, Joachim Metzger, Kornelia Dittmar, Hans-Jürgen Engelmann, HH Hidde Brongersma
Publikováno v:
Surface and Interface Analysis. 49:1175-1186
With the transition to ≤28-nm CMOS technology nodes, the surface analytical challenges with regard to steadily decreasing dimensions and still growing materials options raise the demand of high performing surface analysis techniques. Characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd28b97f9762ba36800243f839a22420
https://doi.org/10.1002/sia.6312
https://doi.org/10.1002/sia.6312
Autor:
Teimuraz Mchedlidze, Elke Erben
Publikováno v:
physica status solidi (a). 217:2000625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55a25803d7f58345a11dd7ba8209ac5a
https://doi.org/10.1002/pssa.202000625
https://doi.org/10.1002/pssa.202000625
Autor:
Tom Herrmann, Hongsik Yoon, Torsten Klick, Alban Zaka, Seunghwan Seo, Juergen Faul, Joerg Schmid, J. Kluth, Sandra Hecker, Zhen Xu, Udo Ziller, Chang Ming-Cheng, Ralf vanBentum, Gabriele Congedo, Vivek Joshi, Xin Zou, Hema Ramamurthy, Nigel Chan, Elke Erben, Youmean Lee, Petra Poth, C. Weintraub, Gerd Zschaetzsch
Publikováno v:
ESSDERC
This paper presents a 0.110um2Ultra Low Leakage (ULL) 6T-SRAM for Internet Of Things (lOT) application with competitive 0.7pA/cell retention leakage and $\pmb{1.45}\mathbf{mV}^{\ast}\mathbf{um}$ transistor mismatch coefficient (AVT). A back gate dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38aac1663ffb60b67b2bc0350072117
https://doi.org/10.1109/essderc.2018.8486897
https://doi.org/10.1109/essderc.2018.8486897
Publikováno v:
Complementary Metal Oxide Semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b641fdeb9e2a3791d154955a25e1f27
https://doi.org/10.5772/intechopen.78335
https://doi.org/10.5772/intechopen.78335
Publikováno v:
Solid State Phenomena. 242:459-465
Fast progress in nanometer-node high-k metal gate (HKMG) technology requires the development of versatile and detailed characterization methods for semiconductor / dielectric / metal stacks and interfaces between them. Complexity of the advanced fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359b10befd61bfac05018fc298277bb5
https://doi.org/10.4028/www.scientific.net/ssp.242.459
https://doi.org/10.4028/www.scientific.net/ssp.242.459
Autor:
R. Hoffmann, Robert Binder, Maximilian Drescher, Elke Erben, Stefan Slesazeck, Uwe Schröder, P. Polakowski, Stefan Müller, Thomas Mikolajick, Sabine Kolodinski, Joachim Metzger, Stefan Flachowsky, Johannes Müller, Elliot John Smith, Jan Paul, Dina H. Triyoso, Stefan Riedel, Halid Mulaosmanovic
Publikováno v:
ECS Transactions. 69:85-95
One of the key challenges in the development of embedded memory solutions is to ensure their compatibility to CMOS processing and to reduce the added complexity to a minimum. Especially the parallel implementation of charge based one-transistor memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de46d185223fc3f6ed86dec69a3d381
https://doi.org/10.1149/06903.0085ecst
https://doi.org/10.1149/06903.0085ecst
Autor:
Kok Wai Johnny Chew, Lye Hock Chan, L. Pirro, El Mehdi Bazizi, R. Taylor, Yogadissen Andee, Josef S. Watts, Christoph Schwan, Edward J. Nowak, Thomas Feudel, Thorsten Kammler, Steffen Lehmann, S.N. Ong, Bryan Rice, Elke Erben, W.H. Chow, Elliot John Smith, J. Mazurier, David Harame, Kumaran Sundaram
Publikováno v:
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
We report an experimental pFET with 420GHz f T , which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac41af315d66d5fd225904e1ddfe7ca
https://doi.org/10.1109/rfic.2017.7969023
https://doi.org/10.1109/rfic.2017.7969023
Autor:
Maximilian Drescher, Michael Schreiber, Florian Lazarevic, Elke Erben, R. Leitsmann, Philipp Plänitz
The further development of future semiconductor devices necessitates methods for characterization on an atomic scale. This ab initio investigation reveals consequences of nitrogen treatment of the state-of-the-art high- $k$ gate-stacks. The model all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::befcc6a1cfb89d9e1460c53b8300138e
https://publica.fraunhofer.de/handle/publica/253750
https://publica.fraunhofer.de/handle/publica/253750
Autor:
I. Aydin, C. Weintraub, J. Schmidt, Elke Erben, Hans-Jürgen Thees, Jamie Schaeffer, J. Kluth, T. Heller, C. Metze, R. Mulfinger, S. Nielsen, Jan Hoentschel, Thomas Feudel, Jürgen Faul, Rick Carter, J. Bernard, Peter Javorka, L. Pirro, David Harame, G. Grasshoff, S. Morvan, B. Rice, Carsten Grass, J-U. Sachse, Elliot John Smith, Mahbub Rashed, C. Bao, R. Nelluri, L. M-Meskamp, J. Mazurier, Yogadissen Andee, Thorsten Kammler, E. Bourjot, A. Preusse, Heimanu Niebojewski, Maud Vinet, P-Y. Chou, Peter Baars, R. Taylor
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM)
22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::694b50f52b286e0ad5957b2cb925a715
https://zenodo.org/record/1272091
https://zenodo.org/record/1272091
Autor:
Thomas Mikolajick, A. Kasic, Martin Krupinski, Elke Erben, M. Klude, Thomas Hecht, Johannes Heitmann
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:253-259
A combination of a common ellipsometric thickness determination from a plane surface and volume-related information gained from a Fourier transform infrared measurement enables monitoring of thin nm-scale layers in 3-D structures. This method was est
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28f525423db306f37478f93e4c272ce2
https://doi.org/10.1109/tsm.2013.2252374
https://doi.org/10.1109/tsm.2013.2252374