Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Elizabeth Weitzman"'
Autor:
Elizabeth Weitzman
A charmingly illustrated and timely tribute to the women who broke glass ceilings in film and television, debuting during an historic time of change in the entertainment industry. Renegade Women in Film and TV blends stunning illustrations, fascinati
Autor:
Elizabeth Weitzman
Five thousand years ago, someone (or a lot of someones) shaped and assembled a group of 25-ton rocks in southwest England. We call it Stonehenge. The summer and winter solstices are amazingly beautiful at this mysterious configuration of rocks. But s
Autor:
Elizabeth Weitzman
In 1911 an American explorer came across an ancient city hidden high in the Andes Mountains of Peru. Since then, explorers, archaeologists, and tourists have been fascinated by this beautiful and mysterious city known as Machu Picchu. The city appear
Autor:
Richard Ortega, Mike Tiner, Werner Blum, Greg Braeckelmann, Larry Zhao, Matt Herrick, Stacye R. Thrasher, C. Capasso, Martin Gall, Stewart Rose, Paul R. Besser, Hisao Kawasaki, Cindy Reidsema Simpson, Brett Caroline Baker, Ehrenfried Zschech, Delrose Winter, Elizabeth Weitzman
Publikováno v:
Journal of Electronic Materials. 30:320-330
The microstructure of inlaid Cu lines has been quantified as a function of annealing conditions, post-plating, and post-CMP. The grain size distribution was measured using the median intercept method, crystallographic texture was characterized by pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f6604f05a3aa32520a4baee71e6a45
https://doi.org/10.1007/s11664-001-0038-7
https://doi.org/10.1007/s11664-001-0038-7
Autor:
R. Marsh, R. Venkatraman, R. Mosely, Roc Blumenthal, P. Zhang, Robert W. Fiordalice, T. Sparks, J. Farkas, H. Zhang, Dharmesh Jawarani, J. Klein, T. Guo, F. Pintchovski, Hisao Kawasaki, T. P. Ong, Elizabeth Weitzman, Wei Wu, Ajay Jain, Martin Gall, S. Garcia, M. Fernandes
Publikováno v:
Applied Physics Letters. 73:82-84
This letter reports an investigation of two unique dual inlaid metallization approaches with low pressure chemical vapor deposition (LPCVD) of aluminum (Al) for sub-0.35 μm ultra-large-scale-integration interconnect technology: (1) warm Al/CVD Al/co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::598a6557796787745badfd86ba5d3d2b
https://doi.org/10.1063/1.121731
https://doi.org/10.1063/1.121731
Autor:
Sam S. Garcia, Roc Blumenthal, R. Fiordalice, R. Marsh, Ramnath Venkatraman, Hisao Kawasaki, Jeffrey L. Klein, J. Gelatos, F. Pintchovski, M. Fernandes, Elizabeth Weitzman, T. P. Ong
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
This report describes the development and integration of a blanket CVD aluminum module into advanced microprocessor devices. The in situ deposition of sputter deposited nucleation layers and PVD Al overlayers has been demonstrated to improve film mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ac2c2fba44e621e587d3ecaa0dbcc2
https://doi.org/10.1109/vlsit.1996.507786
https://doi.org/10.1109/vlsit.1996.507786
Autor:
Bob Fiordalice, J. J Lee, Greg Hamilton, Elizabeth Weitzman, Ram Venkatraman, Greg Braeckelmann, Jiming Zhang, Dean J. Denning
Publikováno v:
MRS Proceedings. 564
The advent of inlaid Cu interconnects has presented new challenges for the industry to fill high aspect ratio dual inlaid features. CVD Cu offers advantages for excellent step coverage and is a technique extendible for future generations of devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29ab0af75b7a927a9fc67c75ee2cd9e6
https://doi.org/10.1557/proc-564-243
https://doi.org/10.1557/proc-564-243
Autor:
Ramnath Venkatraman, B. Ekstrom, Gregory Norman Hamilton, M. Herrick, Ajay Jain, O. Adetutu, Elizabeth Weitzman
Publikováno v:
MRS Proceedings. 564
The adoption of copper (Cu) interconnects has imposed the challenge of developing a chemical vapor deposition (CVD) diffusion barrier technology that can be implemented for subhalf micron back-end design rules. Chemical vapor deposition (CVD) offers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6002c439cbaa22d500ebfb2c9386abde
https://doi.org/10.1557/proc-564-269
https://doi.org/10.1557/proc-564-269
Autor:
Elizabeth Weitzman, John Mendonca, S. Anderson, M. Angyal, Jeffrey L. Klein, Gregory Norman Hamilton, B. R. Rogers, R. Islam, Vidya Kaushik, Suresh Venkatesan, C. Capasso, Cindy Reidsema Simpson, Rich Gregory, Hisao Kawasaki, Ramnath Venkatraman, Stanley M. Filipiak, M. Herrick, D.G Coronell, E. Apen, Larry E. Frisa, Janos Farkas, R. Fiordalice, Dean J. Denning, Ajay Jain, P. Crabtree, T. P. Ong, B. Smith, T. Sparks
Publikováno v:
MRS Proceedings. 514
We report the integration of six levels of Cu interconnects using dual inlaid patterning in a 0.2 μm logic technology. A review of process technology as well as device performance shortcomings using conventional aluminum metallization has been prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc9ad3030df8a3b143769e2a0afe0ee
https://doi.org/10.1557/proc-514-41
https://doi.org/10.1557/proc-514-41