Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Elizabeth V. Favela"'
Autor:
Elizabeth V. Favela, Kun Zhang, Matthew J. Cabral, Alice Ho, Sun Ho Kim, Kalyan K. Das, Lisa M. Porter
Publikováno v:
Journal of Electronic Materials. 52:1927-1936
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69d823562e6f33446924a0291210a8f
https://doi.org/10.1007/s11664-022-10151-6
https://doi.org/10.1007/s11664-022-10151-6
Autor:
Elizabeth V. Favela, Hyung Min Jeon, Kevin D. Leedy, Kun Zhang, Szu-Wei Tung, Francelia Sanchez Escobar, C. V. Ramana, Lisa M. Porter
Publikováno v:
Journal of Vacuum Science & Technology B. 41
Thin (40–150 nm), highly doped n+ (1019–1020 cm−3) Ga2O3 layers deposited using pulsed laser deposition (PLD) were incorporated into Ti/Au ohmic contacts on (001) and (010) β-Ga2O3 substrates with carrier concentrations between 2.5 and 5.1 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9de60bbe18b67c099643c51731d3a5
https://doi.org/10.1116/6.0002620
https://doi.org/10.1116/6.0002620
Autor:
Elizabeth V. Favela, Tianxiang Lin, Kalyan K. Das, Zbigniew Galazka, G. Wagner, Kunyao Jiang, Lisa M. Porter, Diamond Moody, Luke A. M. Lyle, Andreas Popp
Publikováno v:
ECS Transactions. 92:71-78
In this study, electrical properties of four metals (W, Mo, Au, Ni) as Schottky contacts on n-type (100)-oriented β-Ga2O3 substrates grown by the Czochralski method are reported. The Schottky barrier heights for each metal contact were calculated fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5289c095aaa6ab7827efb720c8bd6523
https://doi.org/10.1149/09207.0071ecst
https://doi.org/10.1149/09207.0071ecst
Autor:
Lisa M. Porter, Kunyao Jiang, Zbigniew Galazka, G. Wagner, Kalyan K. Das, Andreas Popp, Luke A. M. Lyle, Elizabeth V. Favela
Publikováno v:
Journal of Vacuum Science & Technology A. 39:033202
The Schottky barriers of Ti, Mo, Co, Ni, Pd, and Au on (100) β-Ga2O3 substrates were analyzed using a combination of current-voltage (J-V), capacitance-voltage (C-V), and current-voltage-temperature (J-V-T) measurements. Near-ideal, average ideality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e66bf49203db6d3c60c3062cc30e198
https://doi.org/10.1116/6.0000877
https://doi.org/10.1116/6.0000877