Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Elizabeth Buitrago"'
Autor:
Munaf Rahimo, Rachid Jabrany, Maxi Andenna, Chiara Corvasce, Charalampos Papadopoulos, Elizabeth Buitrago
Publikováno v:
IET Power Electronics. 12:3874-3881
A new soft-punch-through (SPT) buffer concept for 600-1200 V insulated-gate bipolar transistors (IGBTs) based on thin wafer technology is proposed. The new SPT structure employs an epitaxial layer for the lightly doped n-type drift region, which is g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ae9c3d63212b15f5e4f41808258049
https://doi.org/10.1049/iet-pel.2019.0124
https://doi.org/10.1049/iet-pel.2019.0124
Autor:
Munaf Rahimo, Jan Vobecky, Nick Schneider, Chiara Corvasce, Elizabeth Buitrago, Luca De-Michielis
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The maximum-punch-through (MPT) buffer is a state-of-the-art insulated gate bipolar transistor (IGBT) field stop concept compatible with $\ge$ 200 mm diameter and thin wafer technology. $(\lt 200 \mu \mathrm{m})$ This buffer concept suited for low vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1c80e23eaeb1c79f870fc9be0b071b
https://doi.org/10.1109/ispsd46842.2020.9170103
https://doi.org/10.1109/ispsd46842.2020.9170103
Publikováno v:
Microelectronics Reliability. 126:114300
The new 1.2 kV trench IGBT developed at Hitachi ABB Power Grids features not only state-of-the-art protection of the active trench with dummy trenches and a deep p-well implant but also a novel plasma flow control. These features allow for full desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::964ea12bde069bcb89bdb555a74aa351
https://doi.org/10.1016/j.microrel.2021.114300
https://doi.org/10.1016/j.microrel.2021.114300
Autor:
Jan Vobecky, Charalampos Papadopoulos, Chiara Corvasce, A. Mesemanolis, Maxi Andenna, Elizabeth Buitrago, Munaf Rahimo
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Different state-of-the-art buffer concepts compatible with ≥ 200 mm diameter, thin wafer technology ( $ ) have been optimized in enhanced planar insulated gate bipolar transistor (IGBT) technology for 1200 V and 1700 V, 150 A rated, 13.6 x 13.6 mm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8fff2d162d4b7eec0059f7195644609
https://doi.org/10.1109/ispsd.2019.8757638
https://doi.org/10.1109/ispsd.2019.8757638
Autor:
Waiz Karim, Shumin Yang, Yanqing Wu, Yasin Ekinci, Renzhong Tai, Daniel Fan, Elizabeth Buitrago
Publikováno v:
Microelectronic Engineering
Achromatic Talbot lithography (ATL) at extreme ultraviolet (EUV) wavelengths has been used to produce one or two-dimensional periodic patterns over large areas. In this work, an ATL transmission mask was used to perform EUV exposures at 13.5nm and 8.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66a6dc134c3660b47fba328324e5e685
https://doi.org/10.1016/j.mee.2016.02.026
https://doi.org/10.1016/j.mee.2016.02.026
Publikováno v:
Microelectronic Engineering. 155:39-43
As the lithography feature sizes continue to shrink, the aspect ratios of the patterned resist structures tend to increase as the thickness of the resist cannot be scaled down at the same pace with the resolution. This trend has resulted in the perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc762c1c8f584a8bd7e3975bd8b03d0b
https://doi.org/10.1016/j.mee.2016.02.024
https://doi.org/10.1016/j.mee.2016.02.024
Autor:
Tomoki Nagai, Satoshi Dei, Akihiro Oshima, Gijsbert Rispens, Yasin Ekinci, Marieke Meeuwissen, Hisashi Nakagawa, Seiichi Tagawa, Seiji Nagahara, Yuichi Terashita, Kosuke Yoshihara, Yukie Minekawa, Takehiko Naruoka, Oktay Yildirim, Coen Verspaget, Raymond Maas, Elizabeth Buitrago, Gosuke Shiraishi, Rik Hoefnagels
Publikováno v:
Journal of Photopolymer Science and Technology. 29:475-478
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc8ef41ab284055a30d13986642f0f2
https://doi.org/10.2494/photopolymer.29.475
https://doi.org/10.2494/photopolymer.29.475
Autor:
Roberto Fallica, Tero S. Kulmala, Yasin Ekinci, Daniel Fan, Elizabeth Buitrago, Michaela Vockenhuber
Publikováno v:
Microelectronic Engineering
We investigate a molecular Sn-oxide based negative tone resist featuring high absorbance at EUV wavelengths for the simple and direct fabrication of highly efficient diffraction gratings necessary for single-digit nm resolution patterning with EUV in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cca429146d28c55557f34c89964f0cdb
Autor:
Chiara Corvasce, Elizabeth Buitrago, Jan Vobecky, A. Mesemanolis, Charalampos Papadopoulos, Munaf Rahimo
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A shallow phosphorus buffer peak has been added to state-of-the-art planar soft punch through IGBT buffer (1200 V and 1700 V, 150 A, 13.6 × 13.6 mm2) to lower the leakage current and expand the temperature operation range up to 200°C. The new buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51ad308bf57705e068a61adef642f71b
https://doi.org/10.1109/ispsd.2018.8393712
https://doi.org/10.1109/ispsd.2018.8393712
Autor:
Jo Finders, Yasin Ekinci, Marieke Meeuwissen, Gijsbert Rispens, Paul Derks, Sander Frederik Wuister, Oktay Yildirim, Michaela Vockenhuber, Anton van Oosten, Elizabeth Buitrago, Rik Hoefnagels
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) lithography with 13.5 nm wavelength is the main option for sub-10nm patterning in the semiconductor industry. We report improvements in resist performance towards EUV high volume manufacturing. A local CD uniformity (LCDU) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb47a3abf776abd23cb15e22fa436c2
https://doi.org/10.1117/12.2257415
https://doi.org/10.1117/12.2257415