Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Elizabeth A. Ching"'
Publikováno v:
Societies, Vol 13, Iss 4, p 99 (2023)
Multiprofessional, interorganizational, and cross-sector collaboration is widely recognized as essential to counter human trafficking [...]
Externí odkaz:
https://doaj.org/article/c8f9fa66ef344091904163f91047edeb
Publikováno v:
IEEE Transactions on Electron Devices. 69:3296-3301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c078214b3bfdfd084b56935df3e2d803
https://doi.org/10.1109/ted.2022.3166465
https://doi.org/10.1109/ted.2022.3166465
Akademický článek
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Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
HV integrated lateral IGBTs are investigated as an attractive alternative to MOSFETs in integrated high-voltage (up to 230 V), low-power (5 − 500 mW) converters. A performance comparison of SJ-LIGBTs and SJ-MOSFETs is applied to define the design c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2704f2dcd234ee6423105b772772499
https://doi.org/10.23919/ispsd50666.2021.9452214
https://doi.org/10.23919/ispsd50666.2021.9452214
Publikováno v:
Societies (2075-4698); Apr2023, Vol. 13 Issue 4, p99, 3p
Autor:
Liang Yew Ng, Elizabeth Kho Ching Tee, Alexander Hoelke, Florin Udrea, S. Pilkington, Marina Antoniou, Wan Azlan bin Wan Zainal Abidin, Deb Kumar Pal
Publikováno v:
Solid-State Electronics. 96:38-43
Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e28b8db4f7fe0f6223b1e6086fe5069
https://doi.org/10.1016/j.sse.2014.04.018
https://doi.org/10.1016/j.sse.2014.04.018
Autor:
Elizabeth Kho Ching Tee, Alexander Holke, Florin Udrea, Wan Azlan bin Wan Zainal Abidin, N. L. Yew, Marina Antoniou, D. K. Pal, S. Pilkington
Publikováno v:
IEEE Transactions on Electron Devices. 60:1412-1415
This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3665f5a035ffc906e7f8c55369131c
https://doi.org/10.1109/ted.2013.2246165
https://doi.org/10.1109/ted.2013.2246165
Autor:
Elizabeth Kho Ching Tee
Publikováno v:
IOSR Journal of Electrical and Electronics Engineering. 3:35-52
The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral Insulated Gate Bipolar Transistor (Lateral IGBT/ LIGBT), touted as the best candidate to serve these two purposes. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a62e050b934ebf1644e31d1c0202064
https://doi.org/10.9790/1676-0313552
https://doi.org/10.9790/1676-0313552
Autor:
Mark D. Carlson, Bruce L. Wilkoff, William H. Maisel, Kenneth A. Ellenbogen, Leslie A. Saxon, Eric N. Prystowsky, Joseph S. Alpert, Michael E. Cain, Elizabeth A. Ching, Anne B. Curtis, D. Wyn Davies, Stephen C. Hammill, Robert G. Hauser, Rachel Lampert, Douglas P. Zipes
Publikováno v:
Heart Rhythm. 3:1250-1273
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7daca55404801128cd11164f86fed15
https://doi.org/10.1016/j.hrthm.2006.08.029
https://doi.org/10.1016/j.hrthm.2006.08.029
