Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Elisa Camozzi"'
Autor:
Niccolo Righetti, Chandru Venkatasubramanian, Yifen Liu, Mebrahtu Henok T, Huang Guangyu, Haitao Liu, Xiangyu Yang, Salil Mujumdar, Akira Goda, Hiroyuki Sanda, Andrew Bicksler, Yu Yuwen, Srivardhan Gowda, Elisa Camozzi, Kevin L. Beaman, Tecla Ghilardi, Christian Caillat, Matt Ulrich, Randy J. Koval, Duo Mao
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
The Gate-Induce-Drain-Leakage (GIDL)-assisted body biasing for erase, which is a technique essential to enabling 3DNAND Flash CMOS Under Array architectures, has been extensively studied and successfully optimized to achieve high-performance, reliabl
Autor:
Federica Zanderigo, Elisa Camozzi, Petronilla Scintu, Tecla Ghilardi, Daniele Piumi, Helen H. Zhu, Reza Sadjadi, Andy Romano, Maria Rosaria Boccardi
Publikováno v:
ECS Transactions. 13:55-61
Self-Aligned-Source (SAS) technology is a process option commonly used in process integration for Flash NOR. This approach is realized by removing the field oxide from the source lines of the array, which is implanted with N-type dopant, so two adjac
Autor:
Lin Li, Niccolo Righetti, Christopher J. Larsen, David Daycock, S. Beltrami, Akira Goda, M. Bertuccio, Matthew J. King, Jeff Karpan, Giuseppina Puzzilli, Ceredig Roberts, Ricardo Basco, Elisa Camozzi, William Kueber
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
A 2D 16nm planar NAND cell technology is described with good cell to cell interference and reliability that can be used in a wide variety of applications. This second generation planar cell uses a high-K dielectric stack and a thin poly floating gate
Autor:
Christian Monzio Compagnoni, Evelyne Mascellino, Elisa Camozzi, Alessandro Sebastiani, G. Ghidini, A. Maconi, Giorgio Padovini, Eugenio Greco, Alessandro S. Spinelli, Claudia Scozzari, Paolo Tessariol, Salvatore Maria Amoroso, Aurelio Giancarlo Mauri, Michele Ghidotti, Andrea L. Lacaita, N. Galbiati
This paper presents a detailed investigation of the ISPP dynamics of charge-trap memory capacitors, considering not only the flat-band voltage but also the bottom oxide electric field and tunneling current evolution during programming. Differently fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2abb81e91317f67b59043687c917ad6
http://hdl.handle.net/11311/572295
http://hdl.handle.net/11311/572295
Autor:
A.L. Lacaita, Aurelio Giancarlo Mauri, Salvatore Maria Amoroso, E. Greco, Alessandro S. Spinelli, Elisa Camozzi, Paolo Tessariol, C. Monzio Compagnoni, A. Ghetti, S. Vigano, A. Maconi
We present a comprehensive investigation of the programming dynamics of nanoscale charge-trap memories, based on 3D Monte Carlo simulations accounting for: 1) true 3D electro-statics during programming and read; 2) atomistic substrate doping; 3) disc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ccba7e76a3ad4032d023506c373a2dd
http://hdl.handle.net/11311/574946
http://hdl.handle.net/11311/574946
Autor:
Claudia Scozzari, Alessandro S. Spinelli, Gabriella Ghidini, Salvatore Maria Amoroso, Elisa Camozzi, Alessandro Grossi, Andrea L. Lacaita, N. Galbiati, Armando Rangoni, Tecla Ghilardi, Aurelio Giancarlo Mauri, Christian Monzio Compagnoni, A. Maconi, Evelyne Mascellino, Paolo Tessariol
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
In this work we present a detailed investigation of TANOS memory reliability, focusing on issues raised by Al 2 O 3 trapping/detrapping and leakage. These effects are investigated as a function of alumina thickness, electric field and temperature, co
The photon counting histogram (PCH) analysis of the fluorescence fluctuations provides the molecular brightness (ε) and the average number of fluorophores (〈Nn〉) in an open observation volume. PCH, which is based on the analysis of the whole of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a42ec30f3511a5381b7f3e936f49a856
http://hdl.handle.net/10281/1749
http://hdl.handle.net/10281/1749