Zobrazeno 1 - 10 of 14 pro vyhledávání: '"Elisa Arduca"'
1
Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO2
Autor: Michele Laus, Gabriele Seguini, Elisa Arduca, Valentina Gianotti, Michele Perego, Edoardo Mascheroni
Publikováno v: Journal of Materials Chemistry C. 9:4020-4028
A polystyrene homopolymer with narrow molecular weight distribution (Mn = 2.3 ± 0.3 kg mol−1, Đ = 1.05 ± 0.01) and end-terminated with a phosphorus containing moiety has been used to form P δ-layers embedded into a SiO2 matrix. The number of P
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c8a0cbf33873934e71253e650af801f
https://doi.org/10.1039/d0tc06015a
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2
Engineering of the spin on dopant process on silicon on insulator substrate
Autor: Erfan Mafakheri, Giulio Tavani, Alexey Fedorov, Michele Perego, Mario Lodari, Andrea Barzaghi, Daniel Chrastina, Chiara Barri, Elisa Arduca, Francesco Scotognella, Luca Fagiani, Marco Abbarchi, Jacopo Frigerio, Monica Bollani
Publikováno v: Nanotechnology, 32(2)
Nanotechnology
Nanotechnology (Bristol, Online) (2021). doi:10.1088/1361-6528/abbdda
info:cnr-pdr/source/autori:Chiara Barri, Erfan Mafakheri, Luca Fagiani, Giulio Tavani, Andrea Barzaghi, Daniel Chrastina, Alexey Fedorov, Jacopo Frigerio, Mario Lodari, Francesco Scotognella, Elisa Arduca, Marco Abbarchi, Michele Perego, Monica Bollani/titolo:Engineering of the spin on dopant process on silicon on insulator substrate/doi:10.1088%2F1361-6528%2Fabbdda/rivista:Nanotechnology (Bristol, Online)/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume
Nanotechnology, 2020, 32 (2), pp.025303
We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2820540ce06e6e358be47d8274aa73e8
http://resolver.tudelft.nl/uuid:1959a311-9279-4652-884b-fcbd120731a0
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3
Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2
Autor: Michele Perego, Christian Martella, Mario Scuderi, Gabriele Seguini, Enrico Napolitani, D. De Salvador, C. Spinella, Elisa Arduca, Giuseppe Nicotra, Alessio Lamperti
Publikováno v: Journal of materials chemistry. C
6 (2018): 119–126. doi:10.1039/c7tc04732k
info:cnr-pdr/source/autori:Arduca E.; Seguini G.; Martella C.; Lamperti A.; Napolitani E.; De Salvador D.; Nicotra G.; Scuderi M.; Spinella C.; Perego M./titolo:Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2/doi:10.1039%2Fc7tc04732k/rivista:Journal of materials chemistry. C (Print)/anno:2018/pagina_da:119/pagina_a:126/intervallo_pagine:119–126/volume:6
Due to their interesting optical and electronic properties, silicon nanocrystals (Si NCs) are the subject of intense research activity. The definition of their electronic structure is not trivial, neither from a theoretical nor from an experimental p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::801527b72bf4db85ee98953944bedabb
http://hdl.handle.net/11577/3258211
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4
Boron-terminated polystyrene as potential spin-on dopant for microelectronic applications
Autor: Cristiano Aliberti, Giovanni Paleari, Diego Antonioli, Michele Perego, Elisa Arduca, Gabriele Seguini, Valentina Gianotti, Michele Laus, Katia Sparnacci
Publikováno v: AIP Conference Proceedings.
Boron-terminated polystyrene with molecular weight ranging from 1800 to 18000 g/mol were synthesized for p-type doping of silicon substrates through spin-on technique. Several polymers were prepared using the ARGET-ATRP method using tert-butyl 2-brom
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::faef14c8475c5650edebd590bdd1511d
https://doi.org/10.1063/1.5046035
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5
Deterministic doping via self-limited grafting of phosphorus end-terminated polymers
Autor: Elisa Arduca, Michele Perego, Riccardo Chiarcos, Valentina Gianotti, Gabriele Seguini, Katia Sparnacci, Michele Laus, Andrea Nomellini, Diego Antonioli
Publikováno v: AIP Conference Proceedings.
Phosphorus terminated polystyrene polymers with molar mass ranging from 2 to 25 kg/mol and narrow molar mass distribution were synthesized by Atom Transfer Radical Polymerization (ATRP) followed by phosphorylation reaction. Polymers were grafted onto
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f20c9e95c1f27a15eee5962f0a998579
https://doi.org/10.1063/1.5046027
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6
Control of Doping Level in Semiconductors via Self-Limited Grafting of Phosphorus End-Terminated Polymers
Autor: Andrea Nomellini, Diego Antonioli, Michele Laus, Michele Perego, Gabriele Seguini, Elisa Arduca, Valentina Gianotti, Katia Sparnacci
Publikováno v: ACS nano 12 (2018): 178–186. doi:10.1021/acsnano.7b05459
info:cnr-pdr/source/autori:Perego, Michele; Seguini, Gabriele; Arduca, Elisa; Nomellini, Andrea; Sparnacci, Katia; Antonioli, Diego; Gianotti, Valentina; Laus, Michele/titolo:Control of Doping Level in Semiconductors via Self-Limited Grafting of Phosphorus End-Terminated Polymers/doi:10.1021%2Facsnano.7b05459/rivista:ACS nano/anno:2018/pagina_da:178/pagina_a:186/intervallo_pagine:178–186/volume:12
An effective bottom-up technology for precisely controlling the amount of dopant atoms tethered on silicon substrates is presented. Polystyrene and poly (methyl methacrylate) polymers with narrow molecular weight distribution and end-terminated with
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::384cc3ceb7bd00b95c835055d4934a4d
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7
Low temperature and high quality atomic layer deposition HfO2 coatings
Autor: Leena-Sisko Johansson, Perttu Sippola, Elisa Arduca, Alexander Pyymaki Perros, Harri Lipsanen
Publikováno v: 2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac).
Low temperature high quality thermal atomic layer deposition (ALD) HfO 2 process has been developed and characterized using different oxidant sources—water, water-ozone, and ozone. Despite a low deposition temperature of 170 °C, the coatings are s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5fe4804fb7b1f705ccdc2f19ac71a0d7
https://doi.org/10.1109/nordpac.2017.7993189
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8
Doping of silicon nanocrystals
Autor: Elisa Arduca, Michele Perego
Publikováno v: Materials science in semiconductor processing 62 (2017): 156–170. doi:10.1016/j.mssp.2016.10.054
info:cnr-pdr/source/autori:Elisa Arduca and Michele Perego/titolo:Doping of silicon nanocrystals/doi:10.1016%2Fj.mssp.2016.10.054/rivista:Materials science in semiconductor processing/anno:2017/pagina_da:156/pagina_a:170/intervallo_pagine:156–170/volume:62
ELISA ARDUCA
Over the last decades silicon nanocrystals (Si NCs) were the subject of an intense research activity, due to their optical and electronic properties. Different experimental approaches were developed to synthesize Si NCs embedded in a dielectric matri
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd786967b8e615b479503e507385f625
https://publications.cnr.it/doc/451861
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9
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide
Autor: Elisa Arduca, Michele Perego, Jacopo Frascaroli, D. De Salvador, Enrico Napolitani, Giuseppe Nicotra, Giuliana Impellizzeri, C. Spinella, L. Bacci, Massimo Mastromatteo, Gabriele Seguini, Alberto Carnera, Mario Scuderi
Publikováno v: Surface and Interface Analysis. 46:393-396
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a clear understanding must still be reached, due to challenging characterization issues. In this work, we focused on Si nanocrystals (NCs) embedded in Si
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6097b10856e2ba2c7b62dfebe3fb0ae5
https://doi.org/10.1002/sia.5578
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10
Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography
Autor: Bin Han, Gerard Ben Assayag, Celia Castro, Michele Perego, Yasuyoshi Nagai, Yasuo Shimizu, Koji Inoue, Gabriele Seguini, Elisa Arduca, Sylvie Schamm-Chardon
Publikováno v: RSC Advances
RSC Advances, Royal Society of Chemistry, 2016, 6 (5), pp.3617-3622. ⟨10.1039/c5ra26710b⟩
RSC Advances, 2016, 6 (5), pp.3617-3622. ⟨10.1039/c5ra26710b⟩
ResearcherID
cited By 4; International audience; Single planes of Si nanocrystals (NCs) embedded in a SiO2 matrix were synthesized by annealing SiO2/SiO/SiO2 multilayer structures deposited on Si (100) substrates by e-beam evaporation. The dependence of the shape
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ce7c12c70c0d68eb30b2d9c7990fb0
https://hal.archives-ouvertes.fr/hal-01720446/document
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