Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Elin Steinsland"'
Publikováno v:
Sensors and Actuators A: Physical. 86:73-80
Laser reflectance interferometry has been used to measure in situ etch rates of (100), (110) and (111) single-crystal silicon planes in 5–35 wt.% tetramethyl ammonium hydroxide (TMAH) solutions. The laser reflectance method was seen to give very ac
Publikováno v:
Journal of The Electrochemical Society. 146:3890-3895
The etch rate of crystalline silicon in liquid solutions has been measured in situ by laser reflectance interferometry. A simple method has been developed which allows accurate real‐time observation of the etch rate as a function of etching paramet
Autor:
Anders Hanneborg, Elin Steinsland, Gjermund Kittilsland, M. Nese, Ralph W. Bernstein, Halle Sandmo
Publikováno v:
Sensors and Actuators A: Physical. 54:728-732
Etch rates of single crystal silicon in tetramethyl ammonium hydroxide (TMAH) solutions have been measured as a function of boron doping concentration with the purpose of studying the feasability of an etch stop. The boron concentration has been vari
Publikováno v:
Scopus-Elsevier
This paper reports on a simple method for in situ monitoring of silicon etch rate in watery solutions by laser reflectance interferometry. Accurate measurements of etch rate can be obtained by long term etching on one sample. All changes in etch rate
Publikováno v:
Advances in Experimental Medicine and Biology ISBN: 9781461360513
Tumors develop an abnormal vascular architecture during growth, resulting in poor perfusion and the occurrence of vessels with intermittent circulation, stasis, and thrombosis1,2. Local areas with hypoxic and anoxic cells, acid pH, and necrotic tissu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747ab97f444caaa65ff14fba82235382
https://doi.org/10.1007/978-1-4615-2468-7_71
https://doi.org/10.1007/978-1-4615-2468-7_71
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