Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Elif Oz Orhan"'
The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11bc5bc9fc9f5f071105a3438c2cbf6a
https://avesis.gazi.edu.tr/publication/details/d9e06e5b-cd7f-4c8d-9565-1c5f5120aee6/oai
https://avesis.gazi.edu.tr/publication/details/d9e06e5b-cd7f-4c8d-9565-1c5f5120aee6/oai
Researches on layered materials such as graphene have attracted lots of attention recently. It has been shown that these materials have make a junction with many semiconductor materials that behave like Schottky diodes and have rectifying characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ebdc65c91be27f4abd15ac30098e4bf
https://avesis.gazi.edu.tr/publication/details/87058c5e-e38f-48c5-999f-09d4cdb00399/oai
https://avesis.gazi.edu.tr/publication/details/87058c5e-e38f-48c5-999f-09d4cdb00399/oai
In this work, the impact of gamma-ray irradiation (gamma) on graphene/Al2O3/p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V) analyses of the structure exposed to gamma radiation have been carried out. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55caf617b4c3f3e4863efc3dd80ac4ef
https://avesis.gazi.edu.tr/publication/details/1ab69691-6ee1-4ea0-8deb-fa665834fce4/oai
https://avesis.gazi.edu.tr/publication/details/1ab69691-6ee1-4ea0-8deb-fa665834fce4/oai
The purpose of this study is to determine the effects of gamma (gamma)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8ff4baf440090e3d414f505e93852e9
https://avesis.gazi.edu.tr/publication/details/d4cd017f-6d17-4172-85e7-48fc3e7477e1/oai
https://avesis.gazi.edu.tr/publication/details/d4cd017f-6d17-4172-85e7-48fc3e7477e1/oai
Publikováno v:
Optik
In this study, we analyze the thermo-mechanical behavior of a multi-functional integrated optical chip (MIOC) via the finite element method (FEM). MIOC is a kind of fiber optic component which has a high thermal sensitivity. So; during temperature ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4404d5f31684453c9c00d6377924c0f
https://avesis.gazi.edu.tr/publication/details/41df62d8-972e-4211-a7f8-ab8849df8580/oai
https://avesis.gazi.edu.tr/publication/details/41df62d8-972e-4211-a7f8-ab8849df8580/oai
Publikováno v:
Physica B: Condensed Matter. 568:31-35
Frequency dependent dielectric properties of zinc oxide (ZnO) based metal-insulator-semiconductor (MIS) structure were analyzed in a wide frequency range. The ZnO thin layer on p-type silicon (100) was prepared by using atomic layer deposition (ALD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f57fa67b8cb128218eac80dfdc148f06
https://doi.org/10.1016/j.physb.2019.05.016
https://doi.org/10.1016/j.physb.2019.05.016
Publikováno v:
Optical Fiber Sensors Conference 2020 Special Edition.
Structural behavior of MIOC is investigated via FEM simulations. Studies demonstrate that geometrical configuration of MIOC and waveguiding region induce thermo mechanical stress which affects the stability of the device.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8542c813808a8523264aabe15fc44f7
https://doi.org/10.1364/ofs.2020.w4.12
https://doi.org/10.1364/ofs.2020.w4.12
The electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance–voltage (C/G–V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa99798406d1d40217b44d6578bc635d
https://avesis.gazi.edu.tr/publication/details/d6b183fd-8daa-4ac4-b1a1-b6a208d6926c/oai
https://avesis.gazi.edu.tr/publication/details/d6b183fd-8daa-4ac4-b1a1-b6a208d6926c/oai
Publikováno v:
Journal of Radioanalytical and Nuclear Chemistry. 318:1409-1417
The study analyzed the effects of gamma-ray irradiation and high frequency on metal-polymer-semiconductor (MPS). The MPS structure is analyzed before and after gamma radiation source with dose of 30 kGy and 60 kGy, and the impacts of 60Co gamma-ray i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b9796cba852de4e30de7d3c305cfde7
https://doi.org/10.1007/s10967-018-6210-9
https://doi.org/10.1007/s10967-018-6210-9
Publikováno v:
Materials Science-Poland, Vol 35, Iss 4, Pp 885-892 (2018)
Selçuk, Ahmet Hakan (Balikesir Author)
The voltage and frequency dependence of dielectric constant epsilon', dielectric loss epsilon", electrical modulus M", M', loss tangent tan delta and AC electrical conductivity sigma(AC) of p-Si/ZnO/PMMA/A
The voltage and frequency dependence of dielectric constant epsilon', dielectric loss epsilon", electrical modulus M", M', loss tangent tan delta and AC electrical conductivity sigma(AC) of p-Si/ZnO/PMMA/A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00548f66a70e0c69bdbd39770a6d406f
https://doaj.org/article/ffd6806b15c7419d980ae4c2f315ff8e
https://doaj.org/article/ffd6806b15c7419d980ae4c2f315ff8e